Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl2/Ar

Y. W. Chen; B. S. Ooi; G. I. Ng; C. L. Tan

Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl₂/Ar

Y. W. Chen^*, B. S. Ooi, G. I. Ng, C. L. Tan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl₂/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl₂ percentage in the Cl₂/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.

Original language	English (US)
Pages (from-to)	1903-1905
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	4
State	Published - 2000
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

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title = "Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl2/Ar",

abstract = "We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl2/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl2 percentage in the Cl2/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.} and Tan, {C. L.}",

year = "2000",

language = "English (US)",

volume = "18",

pages = "1903--1905",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl2/Ar

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

AU - Tan, C. L.

PY - 2000

Y1 - 2000

N2 - We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl2/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl2 percentage in the Cl2/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.

AB - We report the development of very high etch rates (>4 μm/min), for InP via hole processes. These processes were developed in an electron cyclotron resonance system using a Cl2/Ar plasma without heating the sample. The InP etch rates increased as a function of Cl2 percentage in the Cl2/Ar mixture, rf power, or microwave power. Via holes, with depths of 100 μm, suitable for monolithic microwave-integrated circuits applications, have been achieved at etch rates as high as 4 μm/min. To the best of our knowledge, this is the highest etch rate ever reported in InP for via hole applications.

UR - http://www.scopus.com/inward/record.url?scp=26444507287&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:26444507287

SN - 1071-1023

VL - 18

SP - 1903

EP - 1905

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Electron cyclotron resonance plasma etching of InP through-wafer connections at >4 μm/min using Cl₂/Ar

Abstract

ASJC Scopus subject areas

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