Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

Y. W. Chen; B. S. Ooi; G. I. Ng

doi:10.1016/S0925-3467(99)00141-X

Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

Y. W. Chen, B. S. Ooi^*, G. I. Ng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report a high etch rate GaAs via hole etching using Cl₂/Ar plasma in an electron cyclotron resonance system. The effects of process parameters, such as RF power, gas flow rate, and microwave power on the GaAs etch rate were investigated. The influence of RF power, process pressure, and etch time on the resultant profiles were studied. The GaAs etch rate was found to increase significantly as Cl₂ flow rate, and RF power or microwave power increased. A maximum etch rate of 6 μm/min has been obtained. Studies also showed that sidewall profile for via patterns can be controlled by varying process pressure and RF power.

Original language	English (US)
Pages (from-to)	223-227
Number of pages	5
Journal	Optical Materials
Volume	14
Issue number	3
DOIs	https://doi.org/10.1016/S0925-3467(99)00141-X
State	Published - Jul 2000
Externally published	Yes

Keywords

Dry etching
Electron cyclotron resonance
GaAs
MMIC
Via holes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Computer Science
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0925-3467(99)00141-X

Cite this

@article{0be30c1f6c2c48cda048cb67d6dda5f6,

title = "Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits",

abstract = "We report a high etch rate GaAs via hole etching using Cl2/Ar plasma in an electron cyclotron resonance system. The effects of process parameters, such as RF power, gas flow rate, and microwave power on the GaAs etch rate were investigated. The influence of RF power, process pressure, and etch time on the resultant profiles were studied. The GaAs etch rate was found to increase significantly as Cl2 flow rate, and RF power or microwave power increased. A maximum etch rate of 6 μm/min has been obtained. Studies also showed that sidewall profile for via patterns can be controlled by varying process pressure and RF power.",

keywords = "Dry etching, Electron cyclotron resonance, GaAs, MMIC, Via holes",

author = "Chen, {Y. W.} and Ooi, {B. S.} and Ng, {G. I.}",

year = "2000",

month = jul,

doi = "10.1016/S0925-3467(99)00141-X",

language = "English (US)",

volume = "14",

pages = "223--227",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "3",

}

TY - JOUR

T1 - Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

AU - Chen, Y. W.

AU - Ooi, B. S.

AU - Ng, G. I.

PY - 2000/7

Y1 - 2000/7

N2 - We report a high etch rate GaAs via hole etching using Cl2/Ar plasma in an electron cyclotron resonance system. The effects of process parameters, such as RF power, gas flow rate, and microwave power on the GaAs etch rate were investigated. The influence of RF power, process pressure, and etch time on the resultant profiles were studied. The GaAs etch rate was found to increase significantly as Cl2 flow rate, and RF power or microwave power increased. A maximum etch rate of 6 μm/min has been obtained. Studies also showed that sidewall profile for via patterns can be controlled by varying process pressure and RF power.

AB - We report a high etch rate GaAs via hole etching using Cl2/Ar plasma in an electron cyclotron resonance system. The effects of process parameters, such as RF power, gas flow rate, and microwave power on the GaAs etch rate were investigated. The influence of RF power, process pressure, and etch time on the resultant profiles were studied. The GaAs etch rate was found to increase significantly as Cl2 flow rate, and RF power or microwave power increased. A maximum etch rate of 6 μm/min has been obtained. Studies also showed that sidewall profile for via patterns can be controlled by varying process pressure and RF power.

KW - Dry etching

KW - Electron cyclotron resonance

KW - GaAs

KW - MMIC

KW - Via holes

UR - http://www.scopus.com/inward/record.url?scp=0347947981&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(99)00141-X

DO - 10.1016/S0925-3467(99)00141-X

M3 - Article

AN - SCOPUS:0347947981

SN - 0925-3467

VL - 14

SP - 223

EP - 227

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

Electron cyclotron resonance etching of GaAs vias for monolithic microwave integrated circuits

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this