Electron-Conductive, Hole-Blocking Contact for Silicon Solar Cells

Xinbo Yang, Wenzhu Liu, Michele De Bastiani, Jingxuan Kang, Hang Xu, Erkan Aydin, Thomas Allen, Lujia Xu, A. AlSaggaf, Issam Gereige, Andres Cuevas, Stefaan De Wolf

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We present an electron-conductive, hole-blocking contact for silicon solar cell in this work. Quasi-metallic titanium nitride (TiN), deposited by reactive magnetron sputtering, is proven to be an effective electron-selective contact for silicon solar cell, simultaneously achieving a low contact resistivity (ρc) of ~ 16 mΩ∙cm2 and a tolerable contact recombination parameter (J0c) of ~ 500 fA/cm2. By the implementation of the dual-function SiO2/TiN contact, which acts simultaneously as efficient surface passivating and metal electrode, a power conversion efficiency of 20% is achieved on an n-type silicon solar cell with a simple structure. This work demonstrates a way to develop efficient n-type Si solar cells with dual-function metal nitride contacts at a low cost.
Original languageEnglish (US)
Title of host publication2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Number of pages5
ISBN (Print)9781728104942
StatePublished - 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


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