Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Keyphrases

• Electroforming-free 100%
• Conduction Mechanism 50%
• Electroforming 50%
• Voltage Range 50%
• SnO Thin Film 50%
• Range State 50%
• Resistance Ratio 50%
• Low Bias 50%
• Memristive Switching 50%
• Cycle Retention 50%
• Stable Resistance 50%
• Cycling Performance 50%

Material Science

• Oxygen Vacancy 100%
• Tin 100%
• Memory Effect 100%
• Thin Films 100%

Physics

• Resistive Switching 100%
• Memory Effect 100%
• Oxygen Vacancy 50%
• Thin Films 50%