Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Mrinal Kanti Hota; Jesus Alfonso Caraveo-Frescas; M. A. McLachlan; Husam N. Alshareef

doi:10.1063/1.4870405

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

Mrinal Kanti Hota, Jesus Alfonso Caraveo-Frescas, M. A. McLachlan, Husam N. Alshareef

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

Original language	English (US)
Pages (from-to)	152104
Journal	Applied Physics Letters
Volume	104
Issue number	15
DOIs	https://doi.org/10.1063/1.4870405
State	Published - Apr 14 2014

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title = "Electroforming-free resistive switching memory effect in transparent p-type tin monoxide",

abstract = "We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.",

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AU - Hota, Mrinal Kanti

AU - Caraveo-Frescas, Jesus Alfonso

AU - McLachlan, M. A.

AU - Alshareef, Husam N.

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2014/4/14

Y1 - 2014/4/14

N2 - We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

AB - We report reproducible low bias bipolar resistive switching behavior in p-type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistance ratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.

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UR - http://scitation.aip.org/content/aip/journal/apl/104/15/10.1063/1.4870405

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DO - 10.1063/1.4870405

M3 - Article

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VL - 104

SP - 152104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

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