Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, Tao Wu

Research output: Contribution to journalArticlepeer-review

158 Scopus citations


We carry out a comparative study on resistive switching in Mn-doped ZnO thin films; samples grown on Pt and Si show unipolar and bipolar switching behaviors, respectively. Fittings of the current-voltage curves and area dependence of the device resistance reveal the filamentary conduction in Pt/Mn:ZnO/Pt. On the other hand, the interfacial effect dominates in Pt/Mn:ZnO/Si, and its low resistance state exponentially relaxes toward the high resistance state in contrast to the good data retention in Pt/Mn:ZnO/Pt. Our results suggest that selecting electrodes dictates the resistive switching mechanism presumably by affecting the migration dynamics of oxygen vacancies.

Original languageEnglish (US)
Article number192113
JournalApplied Physics Letters
Issue number19
StatePublished - Jun 7 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this