Electrochemical Thin-Film Transistors using Covalent Organic Framework Channel

Mrinal K. Hota, Suman Chandra, Yongjiu Lei, Xiangming Xu, Mohamed N. Hedhili, Abdul Hamid Emwas, Osama Shekhah, Mohamed Eddaoudi*, Husam N. Alshareef*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Covalent organic framework (COF) thin films have been successfully prepared and utilized as a channel material in electrical double-layer (EDL) electrochemical transistors. 4,4′-azodianiline (Azo) and 1,3,5-triformylphloroglucinol(Tp) precursors are introduced to prepare azo (-N-N-) functionalized ß-keto-enamine COF (Tp-Azo) thin films. The EDL transistor exhibits a switching ratio of 103 times, a low threshold voltage of 0.6 V, and a field-effect mobility of 0.53 cm2 V−1 s−1. The dynamic behavior of the transistor under different input signals shows responses, which are very similar to the biological synaptic behavior, indicating that the COF devices can be used as artificial synapses. This report opens a new direction in covalent–organic framework development in iontronic applications.

Original languageEnglish (US)
Article number2201120
JournalAdvanced Functional Materials
Volume32
Issue number23
DOIs
StatePublished - Jun 3 2022

Bibliographical note

Funding Information:
M.K.H. and S.C. contributed equally to this work. The research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also thank the core laboratory staff and the imaging and characterization staff at KAUST.

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

  • covalent organic frameworks
  • electrochemical transistors
  • neuromorphic memory
  • thin films

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics

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