Electrochemical doping in electrolyte-gated polymer transistors

Jonathan D. Yuen; Anoop S. Dhoot; Ebinazar B. Namdas; Nelson E. Coates; Martin Heeney; Iain McCulloch; Daniel Moses; Alan J. Heeger

doi:10.1021/ja0749845

Electrochemical doping in electrolyte-gated polymer transistors

Jonathan D. Yuen, Anoop S. Dhoot, Ebinazar B. Namdas, Nelson E. Coates, Martin Heeney, Iain McCulloch, Daniel Moses, Alan J. Heeger

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 10 6 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films. © 2007 American Chemical Society.

Original language	English (US)
Pages (from-to)	14367-14371
Number of pages	5
Journal	Journal of the American Chemical Society
Volume	129
Issue number	46
DOIs	https://doi.org/10.1021/ja0749845
State	Published - Nov 21 2007
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

Biochemistry
Colloid and Surface Chemistry
General Chemistry
Catalysis

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title = "Electrochemical doping in electrolyte-gated polymer transistors",

abstract = "By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 10 6 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films. {\textcopyright} 2007 American Chemical Society.",

author = "Yuen, {Jonathan D.} and Dhoot, {Anoop S.} and Namdas, {Ebinazar B.} and Coates, {Nelson E.} and Martin Heeney and Iain McCulloch and Daniel Moses and Heeger, {Alan J.}",

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doi = "10.1021/ja0749845",

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T1 - Electrochemical doping in electrolyte-gated polymer transistors

AU - Yuen, Jonathan D.

AU - Dhoot, Anoop S.

AU - Namdas, Ebinazar B.

AU - Coates, Nelson E.

AU - Heeney, Martin

AU - McCulloch, Iain

AU - Moses, Daniel

AU - Heeger, Alan J.

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2007/11/21

Y1 - 2007/11/21

N2 - By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 10 6 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films. © 2007 American Chemical Society.

AB - By comparing the changes in π-π* absorption with the transconductance in PEO-LiCIO4 electrolyte-gated FETs, we have demonstrated that the high channel currents obtained at low gate voltages result from reversible electrochemical doping of the semiconducting polymer film. At low temperatures, the conductivity of the electrochemically doped poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene), PBTTT-C14, is nonlinear with a crossover from dσ(T)/dT > 0 to dσ(T)/dT ≈ 0 as a function of the source-drain voltage. High current densities, up to 10 6 A/cm2 at 4.2 K, can be sustained in the electrochemically doped PBTTT-C14 films. © 2007 American Chemical Society.

UR - https://pubs.acs.org/doi/10.1021/ja0749845

UR - http://www.scopus.com/inward/record.url?scp=36448994427&partnerID=8YFLogxK

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SN - 0002-7863

VL - 129

SP - 14367

EP - 14371

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 46

ER -

Electrochemical doping in electrolyte-gated polymer transistors

Abstract

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ASJC Scopus subject areas

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