Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

Mohd Sharizal Alias; Paul O. Leisher; Kent D. Choquette; Khairul Anuar; Dominic Siriani; Sufian Mitani; Y. Mohd Razman; A. M. Abdul Fatah

doi:10.1109/SMELEC.2006.381053

Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

Mohd Sharizal Alias^*, Paul O. Leisher, Kent D. Choquette, Khairul Anuar, Dominic Siriani, Sufian Mitani, Y. Mohd Razman, A. M. Abdul Fatah

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	227-230
Number of pages	4
DOIs	https://doi.org/10.1109/SMELEC.2006.381053
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/SMELEC.2006.381053

Cite this

Alias, M. S., Leisher, P. O., Choquette, K. D., Anuar, K., Siriani, D., Mitani, S., Mohd Razman, Y., & Abdul Fatah, A. M. (2006). Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 227-230). [4266603] https://doi.org/10.1109/SMELEC.2006.381053

@inproceedings{6f72d6ab11b1475bb80a481e55f4b42b,

title = "Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers",

abstract = "In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.",

author = "Alias, {Mohd Sharizal} and Leisher, {Paul O.} and Choquette, {Kent D.} and Khairul Anuar and Dominic Siriani and Sufian Mitani and {Mohd Razman}, Y. and {Abdul Fatah}, {A. M.}",

year = "2006",

doi = "10.1109/SMELEC.2006.381053",

language = "English (US)",

isbn = "0780397312",

pages = "227--230",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

Alias, MS, Leisher, PO, Choquette, KD, Anuar, K, Siriani, D, Mitani, S, Mohd Razman, Y & Abdul Fatah, AM 2006, Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266603, pp. 227-230, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 11/29/06. https://doi.org/10.1109/SMELEC.2006.381053

Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers. / Alias, Mohd Sharizal; Leisher, Paul O.; Choquette, Kent D. et al.

ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 227-230 4266603.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

AU - Alias, Mohd Sharizal

AU - Leisher, Paul O.

AU - Choquette, Kent D.

AU - Anuar, Khairul

AU - Siriani, Dominic

AU - Mitani, Sufian

AU - Mohd Razman, Y.

AU - Abdul Fatah, A. M.

PY - 2006

Y1 - 2006

N2 - In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

AB - In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

UR - http://www.scopus.com/inward/record.url?scp=35148866246&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2006.381053

DO - 10.1109/SMELEC.2006.381053

M3 - Conference contribution

AN - SCOPUS:35148866246

SN - 0780397312

SN - 9780780397316

SP - 227

EP - 230

BT - ICSE 2006

T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006

Y2 - 29 November 2006 through 1 December 2006

ER -

Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this