Abstract
In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.
Original language | English (US) |
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Title of host publication | ICSE 2006 |
Subtitle of host publication | 2006 IEEE International Conference on Semiconductor Electronics, Proceedings |
Pages | 227-230 |
Number of pages | 4 |
DOIs | |
State | Published - 2006 |
Externally published | Yes |
Event | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006 |
Other
Other | 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 |
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Country/Territory | Malaysia |
City | Kuala Lumpur |
Period | 11/29/06 → 12/1/06 |
ASJC Scopus subject areas
- Engineering(all)