Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Chen Shang, Kaiyin Feng, Eamonn T. Hughes, Andrew Clark, Mukul Debnath, Rosalyn Koscica, Gerald Leake, Joshua Herman, David Harame, Peter Ludewig, Yating Wan, John E. Bowers

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first electrically pumped QD lasers grown by molecular beam epitaxy on a 300 mm patterned (001) Si wafer with a butt-coupled configuration. Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6 mW at 20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.
Original languageEnglish (US)
JournalLight: Science and Applications
Volume11
Issue number1
DOIs
StatePublished - Dec 1 2022
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Fingerprint

Dive into the research topics of 'Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers'. Together they form a unique fingerprint.

Cite this