Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si

Justin Norman, M. J. Kennedy, Jennifer Selvidge, Qiang Li, Yating Wan, Alan Y. Liu, Patrick G. Callahan, McLean P. Echlin, Tresa M. Pollock, Kei May Lau, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journalArticlepeer-review

120 Scopus citations

Abstract

High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} vgrooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
Original languageEnglish (US)
Pages (from-to)3927-3934
Number of pages8
JournalOptics Express
Volume25
Issue number4
DOIs
StatePublished - Feb 20 2017
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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