Electrically bistable thin-film device based on PVK and GNPs polymer material

Y. Song; Q. D. Ling; S. L. Lim; E. Y.H. Teo; Y. P. Tan; L. Li; E. T. Kang; D. S.H. Chan; Chunxiang Zhu

doi:10.1109/LED.2006.889519

Electrically bistable thin-film device based on PVK and GNPs polymer material

Y. Song^*, Q. D. Ling, S. L. Lim, E. Y.H. Teo, Y. P. Tan, L. Li, E. T. Kang, D. S.H. Chan, Chunxiang Zhu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

72 Scopus citations

Abstract

We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 10⁵ at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications.

Original language	English (US)
Pages (from-to)	107-110
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/LED.2006.889519
State	Published - Feb 2007
Externally published	Yes

Keywords

Electrical bistability
Gold nanoparticle (GNP)
Memory effect
Poly(N-vinylcarbazole) (PVK)
Thin-film device

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2006.889519

Cite this

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title = "Electrically bistable thin-film device based on PVK and GNPs polymer material",

abstract = "We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications.",

keywords = "Electrical bistability, Gold nanoparticle (GNP), Memory effect, Poly(N-vinylcarbazole) (PVK), Thin-film device",

author = "Y. Song and Ling, {Q. D.} and Lim, {S. L.} and Teo, {E. Y.H.} and Tan, {Y. P.} and L. Li and Kang, {E. T.} and Chan, {D. S.H.} and Chunxiang Zhu",

year = "2007",

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doi = "10.1109/LED.2006.889519",

language = "English (US)",

volume = "28",

pages = "107--110",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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T1 - Electrically bistable thin-film device based on PVK and GNPs polymer material

AU - Song, Y.

AU - Ling, Q. D.

AU - Lim, S. L.

AU - Teo, E. Y.H.

AU - Tan, Y. P.

AU - Li, L.

AU - Kang, E. T.

AU - Chan, D. S.H.

AU - Zhu, Chunxiang

PY - 2007/2

Y1 - 2007/2

N2 - We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications.

AB - We present an electrical-bistability device based on MIM-sandwiched structure. Poly(N-vinylcarbazole) (PVK) mixed with gold nanoparticles (GNPs) serve as the active layer between two metal electrodes. After applying a voltage, the as-fabricated device can transit from low conductivity state to high conductivity state. By simply using a reverse bias, the high conductivity state can return to the low conductivity state. An on/off current ratio as high as 105 at room temperature has been achieved. The memory effect is attributed to electric-field-induced charge transfer complex formed between the PVK and the GNPs. The device shows a good stability under stress test for both states and exhibits a high potential on Flash-type memory applications.

KW - Electrical bistability

KW - Gold nanoparticle (GNP)

KW - Memory effect

KW - Poly(N-vinylcarbazole) (PVK)

KW - Thin-film device

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U2 - 10.1109/LED.2006.889519

DO - 10.1109/LED.2006.889519

M3 - Article

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VL - 28

SP - 107

EP - 110

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

Electrically bistable thin-film device based on PVK and GNPs polymer material

Abstract

Keywords

ASJC Scopus subject areas

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