Electrically and optically erasable non-volatile two-dimensional electron gas memory.

Dongxing Zheng; Junwei Zhang; Xin He; Yan Wen; Peng Li; Yuchen Wang; Yinchang Ma; Haili Bai; Husam N. Alshareef; Xixiang Zhang

doi:10.1039/d2nr01582j

Electrically and optically erasable non-volatile two-dimensional electron gas memory.

Dongxing Zheng, Junwei Zhang, Xin He, Yan Wen, Peng Li, Yuchen Wang, Yinchang Ma, Haili Bai, Husam N. Alshareef, Xixiang Zhang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.

Original language	English (US)
Journal	Nanoscale
DOIs	https://doi.org/10.1039/d2nr01582j
State	Published - Aug 11 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-09-14
Acknowledged KAUST grant number(s): OSR-2019-CRG8-4081
Acknowledgements: The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under the Award No. OSR-2019-CRG8-4081. D. X. Z. and H. L. B. acknowledge the financial support from the National Natural Science Foundation of China (11704278, 51772207 & 11434006) and Natural Science Foundation of Tianjin City (19JCQNJC03000). We thank Dr Long Cheng for the helpful discussion at the University of Waterloo, Canada.

ASJC Scopus subject areas

General Materials Science

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https://repository.kaust.edu.sa/bitstream/10754/680230/4/d2nr01582j.pdf

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@article{9a635e9d0406406782f02bd89f87b03d,

title = "Electrically and optically erasable non-volatile two-dimensional electron gas memory.",

abstract = "The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.",

author = "Dongxing Zheng and Junwei Zhang and Xin He and Yan Wen and Peng Li and Yuchen Wang and Yinchang Ma and Haili Bai and Alshareef, {Husam N.} and Xixiang Zhang",

note = "KAUST Repository Item: Exported on 2022-09-14 Acknowledged KAUST grant number(s): OSR-2019-CRG8-4081 Acknowledgements: The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under the Award No. OSR-2019-CRG8-4081. D. X. Z. and H. L. B. acknowledge the financial support from the National Natural Science Foundation of China (11704278, 51772207 & 11434006) and Natural Science Foundation of Tianjin City (19JCQNJC03000). We thank Dr Long Cheng for the helpful discussion at the University of Waterloo, Canada.",

year = "2022",

month = aug,

day = "11",

doi = "10.1039/d2nr01582j",

language = "English (US)",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

}

TY - JOUR

T1 - Electrically and optically erasable non-volatile two-dimensional electron gas memory.

AU - Zheng, Dongxing

AU - Zhang, Junwei

AU - He, Xin

AU - Wen, Yan

AU - Li, Peng

AU - Wang, Yuchen

AU - Ma, Yinchang

AU - Bai, Haili

AU - Alshareef, Husam N.

AU - Zhang, Xixiang

N1 - KAUST Repository Item: Exported on 2022-09-14 Acknowledged KAUST grant number(s): OSR-2019-CRG8-4081 Acknowledgements: The research reported in this publication was supported by King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) under the Award No. OSR-2019-CRG8-4081. D. X. Z. and H. L. B. acknowledge the financial support from the National Natural Science Foundation of China (11704278, 51772207 & 11434006) and Natural Science Foundation of Tianjin City (19JCQNJC03000). We thank Dr Long Cheng for the helpful discussion at the University of Waterloo, Canada.

PY - 2022/8/11

Y1 - 2022/8/11

N2 - The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.

AB - The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.

UR - http://hdl.handle.net/10754/680230

UR - http://xlink.rsc.org/?DOI=D2NR01582J

U2 - 10.1039/d2nr01582j

DO - 10.1039/d2nr01582j

M3 - Article

C2 - 35971909

SN - 2040-3364

JO - Nanoscale

JF - Nanoscale

ER -

Electrically and optically erasable non-volatile two-dimensional electron gas memory.

Abstract

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