Electrically active dislocations at the Si/GaAs interface

Sergei Lopatin; G. Duscher

doi:10.1017/S1431927604882783

Electrically active dislocations at the Si/GaAs interface

Sergei Lopatin^*, G. Duscher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	336-337
Number of pages	2
Journal	Microscopy and Microanalysis
Volume	10
Issue number	SUPPL. 2
DOIs	https://doi.org/10.1017/S1431927604882783
State	Published - Sep 24 2004

ASJC Scopus subject areas

Instrumentation

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title = "Electrically active dislocations at the Si/GaAs interface",

author = "Sergei Lopatin and G. Duscher",

year = "2004",

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T1 - Electrically active dislocations at the Si/GaAs interface

AU - Lopatin, Sergei

AU - Duscher, G.

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JO - Microscopy and Microanalysis

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Electrically active dislocations at the Si/GaAs interface

ASJC Scopus subject areas

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