Abstract
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 156-160 |
| Number of pages | 5 |
| Journal | Journal of Alloys and Compounds |
| Volume | 720 |
| DOIs | |
| State | Published - May 22 2017 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledgements: The work was partially supported by the II-IV foundation and the University of Texas at Dallas. We thank Mr. Wallace Martin, Dr. Gordon Pollock and Mr. John Maynard from the cleanroom of the University of Texas at Dallas for their help with film preparation. We acknowledge Dr. Jian Wang from the University of Texas at Dallas for his fruitful discussions.