Electrical Manipulation of Exchange Bias in an Antiferromagnet/Ferromagnet-Based Device via Spin–Orbit Torque

Bin Fang, Luis Sánchez-Tejerina San José, Aitian Chen, Yan Li, Dongxing Zheng, Yinchang Ma, Hanin Algaidi, Kai Liu, Giovanni Finocchio, Xixiang Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Electrical manipulation of exchange bias (EB) enables an additional degree of freedom in the design of innovative spintronic devices. However, the electrical switching of EB via spin–orbit torque (SOT) has not been achieved in magnetic tunnel junctions (MTJs), which are one of the building blocks in spintronic devices. Herein, based on the SOT in antiferromagnets (AFMs), perpendicular EB reversal across AFM IrMn and ferromagnetic (FM) [Co/Pt]2 multilayer is demonstrated both in extended and confined geometries. In particular, in three-terminal perpendicular MTJ devices, the switching of the EB using the SOT is achieved. Both high and low resistances are observed at the zero magnetic field during EB switching. The findings provide the direction to include a new functionality in spintronic devices and will inspire future research in exploring the electrical control of EB in SOT magnetic random access memory (SOT-MRAM).

Original languageEnglish (US)
Article number2112406
JournalAdvanced Functional Materials
Volume32
Issue number26
DOIs
StatePublished - Jun 24 2022

Bibliographical note

Publisher Copyright:
© 2022 Wiley-VCH GmbH.

Keywords

  • antiferromagnet
  • electrical manipulation
  • exchange bias
  • spin orbit torque
  • three-terminal magnetic tunnel junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Chemistry
  • Biomaterials
  • General Materials Science
  • Condensed Matter Physics
  • Electrochemistry

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