Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films

Enrico Traversa; Manuela Baroncini; Elisabetta Di Bartolomeo; Gualtiero Gusmano; Plinio Innocenzi; Alessandro Martucci; Andrea Bearzotti

doi:10.1016/s0955-2219(98)00306-9

Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO₂-Al₂O₃ thin films

Enrico Traversa^*, Manuela Baroncini, Elisabetta Di Bartolomeo, Gualtiero Gusmano, Plinio Innocenzi, Alessandro Martucci, Andrea Bearzotti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Al₂O₃-TiO₂ thin films were prepared by a sol-gel processing. Sols were prepared having different TiO₂/Al₂O₃ molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al₂O₃ and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.

Original language	English (US)
Pages (from-to)	753-758
Number of pages	6
Journal	Journal of the European Ceramic Society
Volume	19
Issue number	6-7
DOIs	https://doi.org/10.1016/s0955-2219(98)00306-9
State	Published - Jun 1999
Externally published	Yes

Keywords

AlO
Electrical properties
Films
Sol-gel processes
TiO

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/s0955-2219(98)00306-9

Cite this

@article{e78a28fbbe5644a2b9ccfa41367786a0,

title = "Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films",

abstract = "Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.",

keywords = "AlO, Electrical properties, Films, Sol-gel processes, TiO",

author = "Enrico Traversa and Manuela Baroncini and {Di Bartolomeo}, Elisabetta and Gualtiero Gusmano and Plinio Innocenzi and Alessandro Martucci and Andrea Bearzotti",

year = "1999",

month = jun,

doi = "10.1016/s0955-2219(98)00306-9",

language = "English (US)",

volume = "19",

pages = "753--758",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "6-7",

}

TY - JOUR

T1 - Electrical humidity response of sol-Gel processed undoped and alkali-doped TiO2-Al2O3 thin films

AU - Traversa, Enrico

AU - Baroncini, Manuela

AU - Di Bartolomeo, Elisabetta

AU - Gusmano, Gualtiero

AU - Innocenzi, Plinio

AU - Martucci, Alessandro

AU - Bearzotti, Andrea

PY - 1999/6

Y1 - 1999/6

N2 - Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.

AB - Al2O3-TiO2 thin films were prepared by a sol-gel processing. Sols were prepared having different TiO2/Al2O3 molar ratios, i.e., 9:1, 8:2, and 6:4, without and with the addition of 10 at% of K ions. The films were prepared by dipping the substrates (silicon wafers, alkali-free glass or alumina with comb-type Au electrodes) in the sols. The films were fired in air for 1h at 300, 500, 650 and 800°C. The films were amorphous, at any composition, up to the firing temperature of 500°C. Crystallization of the films was inhibited by larger contents of Al2O3 and K. The humidity-sensitive electrical properties of the thin films were studied using d.c. and a.c. measurements. The addition of K dramatically improved the relative humidity response of the films.

KW - AlO

KW - Electrical properties

KW - Films

KW - Sol-gel processes

KW - TiO

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DO - 10.1016/s0955-2219(98)00306-9

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VL - 19

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JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

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ER -