Electrical detection of femtomolar DNA via gold-nanoparticle enhancement in carbon-nanotube-network field-effect transistors

Xiaochen Dong; Ching Man Lau; Anup Lohani; Subodh G. Mhaisalkar; Johnson Kasim; Zexiang Shen; Xinning Ho; John A. Rogers; Lain Jong Li

doi:10.1002/adma.200702798

Electrical detection of femtomolar DNA via gold-nanoparticle enhancement in carbon-nanotube-network field-effect transistors

Xiaochen Dong^*, Ching Man Lau, Anup Lohani, Subodh G. Mhaisalkar, Johnson Kasim, Zexiang Shen, Xinning Ho, John A. Rogers, Lain Jong Li

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

102 Scopus citations

Abstract

A significant sensitivity enhancement in electrical detection of DNA hybridization in SNFETs through the introduction of reporter DNA-AuNP conjugates in the hybridization step was investigated. The amplified change in drain current allowed to reliably determine the DNA concentration down to ca. 100 fM. Random networks of SWNTs with diameters between 1 and 3 nm and lengths between 5 and 10 μm were first grown onto SiO₂ wafers using chemical vapor deposition techniques. SWNT network transistors (SNFETs) were fabricated in a top-contact device geometry, where 30 nm of a Ta electrodes were patterned on top of it by using standard lithography techniques. It was observed that SNFET-based biosensors and immunosensors may be adapted to detection of a variety of biomarkers for applications ranging from molecular diagnostics to in vitro diagnostics.

Original language	English (US)
Pages (from-to)	2389-2393
Number of pages	5
Journal	Advanced Materials
Volume	20
Issue number	12
DOIs	https://doi.org/10.1002/adma.200702798
State	Published - Jun 18 2008
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Electrical detection of femtomolar DNA via gold-nanoparticle enhancement in carbon-nanotube-network field-effect transistors",

abstract = "A significant sensitivity enhancement in electrical detection of DNA hybridization in SNFETs through the introduction of reporter DNA-AuNP conjugates in the hybridization step was investigated. The amplified change in drain current allowed to reliably determine the DNA concentration down to ca. 100 fM. Random networks of SWNTs with diameters between 1 and 3 nm and lengths between 5 and 10 μm were first grown onto SiO2 wafers using chemical vapor deposition techniques. SWNT network transistors (SNFETs) were fabricated in a top-contact device geometry, where 30 nm of a Ta electrodes were patterned on top of it by using standard lithography techniques. It was observed that SNFET-based biosensors and immunosensors may be adapted to detection of a variety of biomarkers for applications ranging from molecular diagnostics to in vitro diagnostics.",

author = "Xiaochen Dong and Lau, {Ching Man} and Anup Lohani and Mhaisalkar, {Subodh G.} and Johnson Kasim and Zexiang Shen and Xinning Ho and Rogers, {John A.} and Li, {Lain Jong}",

year = "2008",

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doi = "10.1002/adma.200702798",

language = "English (US)",

volume = "20",

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T1 - Electrical detection of femtomolar DNA via gold-nanoparticle enhancement in carbon-nanotube-network field-effect transistors

AU - Dong, Xiaochen

AU - Lau, Ching Man

AU - Lohani, Anup

AU - Mhaisalkar, Subodh G.

AU - Kasim, Johnson

AU - Shen, Zexiang

AU - Ho, Xinning

AU - Rogers, John A.

AU - Li, Lain Jong

PY - 2008/6/18

Y1 - 2008/6/18

N2 - A significant sensitivity enhancement in electrical detection of DNA hybridization in SNFETs through the introduction of reporter DNA-AuNP conjugates in the hybridization step was investigated. The amplified change in drain current allowed to reliably determine the DNA concentration down to ca. 100 fM. Random networks of SWNTs with diameters between 1 and 3 nm and lengths between 5 and 10 μm were first grown onto SiO2 wafers using chemical vapor deposition techniques. SWNT network transistors (SNFETs) were fabricated in a top-contact device geometry, where 30 nm of a Ta electrodes were patterned on top of it by using standard lithography techniques. It was observed that SNFET-based biosensors and immunosensors may be adapted to detection of a variety of biomarkers for applications ranging from molecular diagnostics to in vitro diagnostics.

AB - A significant sensitivity enhancement in electrical detection of DNA hybridization in SNFETs through the introduction of reporter DNA-AuNP conjugates in the hybridization step was investigated. The amplified change in drain current allowed to reliably determine the DNA concentration down to ca. 100 fM. Random networks of SWNTs with diameters between 1 and 3 nm and lengths between 5 and 10 μm were first grown onto SiO2 wafers using chemical vapor deposition techniques. SWNT network transistors (SNFETs) were fabricated in a top-contact device geometry, where 30 nm of a Ta electrodes were patterned on top of it by using standard lithography techniques. It was observed that SNFET-based biosensors and immunosensors may be adapted to detection of a variety of biomarkers for applications ranging from molecular diagnostics to in vitro diagnostics.

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DO - 10.1002/adma.200702798

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JO - Advanced Materials

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Electrical detection of femtomolar DNA via gold-nanoparticle enhancement in carbon-nanotube-network field-effect transistors

Abstract

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