Electrical contacts in monolayer Ga2O3 field-effect tansistors

Linpeng Dong, Shun Zhou, Kaiwen Pu, Chen Yang, Bin Xin, Bo Peng, Weiguo Liu

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


Monolayer (ML) Ga2O3 with wide bandgap and ultra-high electron mobility has gained extensive interests due to its great potential in next-generation electronic and solar-blind optoelectronic applications. Here, we perform a comprehensive investigation on the electronic properties of the ML Ga2O3 field-effect transistors (FETs) with different metal electrodes spanning a wide work function using energy band structure and quantum transport (QT) calculations. The results indicate all the investigated metals form n-type Ohmic contact with ML Ga2O3 in vertical direction, while high Schottky barrier heights (SBHs) exist for holes except for Sc due to its metallization and re-construction at the contact interface. In addition, the existence of tunneling barrier (TB) at the interface of ML Ga2O3/Ag, Au, Pd, and Pt systems reduce the electron injection efficiency to 20.09%, 13.03%, 34.70%, and 26.29%, respectively. Using a back-gated FET configuration, Al electrode exhibits the highest performance with Ohmic contact property and absence of tunneling barrier, thus is believed to act as the best candidate electrode material for ML Ga2O3 transistors. In addition, the results indicate that the current of ML Ga2O3 transistor is dominated by electrons rather than holes. Our study offers a theoretical foundation for the electrode selection for ML Ga2O3 devices.
Original languageEnglish (US)
Pages (from-to)150386
JournalApplied Surface Science
StatePublished - Jun 17 2021

Bibliographical note

KAUST Repository Item: Exported on 2021-06-29
Acknowledgements: This work is supported by the National Natural Science Foundation of China (62004153), Key Research and Development Program of Shaanxi Province (2019ZDLGY16-01), Xi'an Key Laboratory of Intelligent Detection and Perception (201805061ZD12CG45), and Natural Science Foundation of Shaanxi science and Technology Department (021JM-432). Linpeng Dong, Bin Xin, and Weiguo Liu designed this project. Linpeng Dong performed the first principles calculations, analyzed the calculated results and wrote the original manuscript. Shun Zhou and Chen Yang checked the calculation results and modified the manuscript. Kaiwen Pu and Bo Peng modified the manuscript.

ASJC Scopus subject areas

  • Surfaces, Coatings and Films


Dive into the research topics of 'Electrical contacts in monolayer Ga2O3 field-effect tansistors'. Together they form a unique fingerprint.

Cite this