Electrical conductivity and thermopower of Cu-SiO2 nanogranular films

W. Chen; J. J. Lin; X. X. Zhang; H. K. Shin; J. S. Dyck; C. Uher

doi:10.1063/1.1493668

Electrical conductivity and thermopower of Cu-SiO₂ nanogranular films

W. Chen^*, J. J. Lin, X. X. Zhang, H. K. Shin, J. S. Dyck, C. Uher

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have measured the thermopower S and electrical conductivity σ in a series of Cu_x(SiO₂)_1-x nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ T to σ∝T^1/3 is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.

Original language	English (US)
Pages (from-to)	523-525
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	3
DOIs	https://doi.org/10.1063/1.1493668
State	Published - Jul 15 2002
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Electrical conductivity and thermopower of Cu-SiO2 nanogranular films",

abstract = "We have measured the thermopower S and electrical conductivity σ in a series of Cux(SiO2)1-x nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ T to σ∝T1/3 is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.",

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AU - Chen, W.

AU - Lin, J. J.

AU - Zhang, X. X.

AU - Shin, H. K.

AU - Dyck, J. S.

AU - Uher, C.

PY - 2002/7/15

Y1 - 2002/7/15

N2 - We have measured the thermopower S and electrical conductivity σ in a series of Cux(SiO2)1-x nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ T to σ∝T1/3 is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.

AB - We have measured the thermopower S and electrical conductivity σ in a series of Cux(SiO2)1-x nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ T to σ∝T1/3 is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.

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EP - 525

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Electrical conductivity and thermopower of Cu-SiO₂ nanogranular films

Abstract

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