Electrical conductivity and thermopower of Cu-SiO2 nanogranular films

W. Chen*, J. J. Lin, X. X. Zhang, H. K. Shin, J. S. Dyck, C. Uher

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have measured the thermopower S and electrical conductivity σ in a series of Cux(SiO2)1-x nanogranular films between 2 and 300 K with Cu volume fraction x varying from 0.43 up to 1.0. At low temperatures, disorder-enhanced electron-electron interaction effects dictate the behavior of σ. A crossover of the temperature dependence from σ∝ T to σ∝T1/3 is observed as x is lowered and the metal-insulator transition is approached. S is small, shows linear temperature dependence, and is rather insensitive to the change of x. Effects of annealing are also discussed.

Original languageEnglish (US)
Pages (from-to)523-525
Number of pages3
JournalApplied Physics Letters
Issue number3
StatePublished - Jul 15 2002
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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