Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition

Nasir Alfaraj; Kuang-Hui Li; Chun Hong Kang; Davide Priante; Laurentiu Braic; Zaibing Guo; Tien Khee Ng; Xiaohang Li; Boon S. Ooi

doi:10.23919/CLEO.2019.8749387

Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition

Nasir Alfaraj, Kuang-Hui Li, Chun Hong Kang, Davide Priante, Laurentiu Braic, Zaibing Guo, Tien Khee Ng, Xiaohang Li, Boon S. Ooi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

This study reports on (Al0.28Ga0.72)2O3-based ultraviolet-C Schottky metal-semiconductor-metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. © 2019 The Author (s)

Original language	English (US)
Title of host publication	Conference on Lasers and Electro-Optics
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781943580576
DOIs	https://doi.org/10.23919/CLEO.2019.8749387 https://doi.org/10.1364/CLEO_SI.2019.SF2O.1
State	Published - Jul 1 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): BAS/1/1614-01-01
Acknowledgements: The authors acknowledge receipt of the King Abdulaziz City for Science and Technology (KACST) grant no. KACST TIC R2-FP-000, KAUST baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77

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Alfaraj, N., Li, K.-H., Kang, C. H., Priante, D., Braic, L., Guo, Z., Ng, T. K., Li, X., & Ooi, B. S. (2019). Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition. In Conference on Lasers and Electro-Optics Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.23919/CLEO.2019.8749387, https://doi.org/10.1364/CLEO_SI.2019.SF2O.1

@inproceedings{56f927f087c2497f8c5ffce0310e8261,

title = "Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition",

abstract = "This study reports on (Al0.28Ga0.72)2O3-based ultraviolet-C Schottky metal-semiconductor-metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. {\textcopyright} 2019 The Author (s)",

author = "Nasir Alfaraj and Kuang-Hui Li and Kang, {Chun Hong} and Davide Priante and Laurentiu Braic and Zaibing Guo and Ng, {Tien Khee} and Xiaohang Li and Ooi, {Boon S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge receipt of the King Abdulaziz City for Science and Technology (KACST) grant no. KACST TIC R2-FP-000, KAUST baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77",

year = "2019",

month = jul,

day = "1",

doi = "10.23919/CLEO.2019.8749387",

language = "English (US)",

isbn = "9781943580576",

booktitle = "Conference on Lasers and Electro-Optics",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

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Alfaraj, N, Li, K-H, Kang, CH, Priante, D, Braic, L , Guo, Z , Ng, TK , Li, X & Ooi, BS 2019, Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition. in Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.23919/CLEO.2019.8749387, https://doi.org/10.1364/CLEO_SI.2019.SF2O.1

Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition. / Alfaraj, Nasir; Li, Kuang-Hui; Kang, Chun Hong et al.
Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers (IEEE), 2019.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition

AU - Alfaraj, Nasir

AU - Li, Kuang-Hui

AU - Kang, Chun Hong

AU - Priante, Davide

AU - Braic, Laurentiu

AU - Guo, Zaibing

AU - Ng, Tien Khee

AU - Li, Xiaohang

AU - Ooi, Boon S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): BAS/1/1614-01-01 Acknowledgements: The authors acknowledge receipt of the King Abdulaziz City for Science and Technology (KACST) grant no. KACST TIC R2-FP-000, KAUST baseline funding, BAS/1/1614-01-01, and MBE equipment funding C/M-20000-12-001-77

PY - 2019/7/1

Y1 - 2019/7/1

N2 - This study reports on (Al0.28Ga0.72)2O3-based ultraviolet-C Schottky metal-semiconductor-metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. © 2019 The Author (s)

AB - This study reports on (Al0.28Ga0.72)2O3-based ultraviolet-C Schottky metal-semiconductor-metal and metal-insulator-metal photodetectors with peak responsivities of 1.17 and 0.40 A/W, respectively, for an incident-light wavelength of 230 nm at 2.50 V reverse-bias. © 2019 The Author (s)

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DO - 10.23919/CLEO.2019.8749387

M3 - Conference contribution

SN - 9781943580576

BT - Conference on Lasers and Electro-Optics

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Alfaraj N, Li KH, Kang CH, Priante D, Braic L , Guo Z et al. Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition. In Conference on Lasers and Electro-Optics. Institute of Electrical and Electronics Engineers (IEEE). 2019 doi: 10.23919/CLEO.2019.8749387, 10.1364/CLEO_SI.2019.SF2O.1

Electrical Characterization of Solar-Blind Deep-Ultraviolet (Al0.28Ga0.72)2O3Schottky Photodetectors Grown on Silicon by Pulsed Laser Deposition

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