Abstract
A prototype nano-photodiode has been demonstrated based on heterojunctions between ZnO nanowires and p-Si substrate. The electrical and photoelectrical performances of the ZnO/Si structure have been characterized by a conducting atomic force microscopy at nanometer spatial resolution. The photoelectrical measurements demonstrate that the photodiode has high sensitivity and selectivity to UV light.
Original language | English (US) |
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Pages (from-to) | 119-122 |
Number of pages | 4 |
Journal | Chemical Physics Letters |
Volume | 435 |
Issue number | 1-3 |
DOIs | |
State | Published - Feb 12 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- General Physics and Astronomy
- Physical and Theoretical Chemistry