Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

C. Y. Chen; P. H. Chang; K. T. Tsai; J. H. He

doi:10.1109/INEC.2010.5424962

Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

C. Y. Chen, P. H. Chang, K. T. Tsai, J. H. He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm². The resistivity of the ZnO nanowires is measured to be 2.2x10^-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼10⁸ have been fabricated and characterized.

Original language	English (US)
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	1177-1178
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424962
State	Published - 2010
Externally published	Yes
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010

Other

Other	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	01/3/10 → 01/8/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424962

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@inproceedings{9f59b2b90b814874b0656d040249ec58,

title = "Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt",

abstract = "We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.",

author = "Chen, {C. Y.} and Chang, {P. H.} and Tsai, {K. T.} and He, {J. H.}",

year = "2010",

doi = "10.1109/INEC.2010.5424962",

language = "English (US)",

isbn = "9781424435449",

pages = "1177--1178",

booktitle = "INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings",

note = "2010 3rd International Nanoelectronics Conference, INEC 2010 ; Conference date: 03-01-2010 Through 08-01-2010",

}

Chen, CY, Chang, PH, Tsai, KT & He, JH 2010, Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424962, pp. 1177-1178, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 01/3/10. https://doi.org/10.1109/INEC.2010.5424962

TY - GEN

T1 - Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

AU - Chen, C. Y.

AU - Chang, P. H.

AU - Tsai, K. T.

AU - He, J. H.

PY - 2010

Y1 - 2010

N2 - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

AB - We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.

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U2 - 10.1109/INEC.2010.5424962

DO - 10.1109/INEC.2010.5424962

M3 - Conference contribution

AN - SCOPUS:77951665156

SN - 9781424435449

SP - 1177

EP - 1178

BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010

Y2 - 3 January 2010 through 8 January 2010

ER -

Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

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