Abstract
We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1x10-5 Ωcm2. The resistivity of the ZnO nanowires is measured to be 2.2x10-2 Ωcm. ZnO nanowire-based UV photodetectors contacted by the FIB-Pt with the photoconductive gain as high as ∼108 have been fabricated and characterized.
Original language | English (US) |
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Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
Pages | 1177-1178 |
Number of pages | 2 |
DOIs | |
State | Published - 2010 |
Externally published | Yes |
Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: Jan 3 2010 → Jan 8 2010 |
Other
Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
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Country/Territory | China |
City | Hongkong |
Period | 01/3/10 → 01/8/10 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering