Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

J. H. He; P. H. Chang; C. Y. Chen; K. T. Tsai

doi:10.1088/0957-4484/20/13/135701

Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

J. H. He, P. H. Chang, C. Y. Chen, K. T. Tsai

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90 Scopus citations

Abstract

We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10 ^-5 Ω cm². The resistivity of the ZnO NWs is measured to be 2.2 × 10^-2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼10⁸ have been fabricated and characterized.

Original language	English (US)
Article number	135701
Journal	Nanotechnology
Volume	20
Issue number	13
DOIs	https://doi.org/10.1088/0957-4484/20/13/135701
State	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Mechanics of Materials
Mechanical Engineering
Bioengineering
Electrical and Electronic Engineering
General Materials Science

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10.1088/0957-4484/20/13/135701

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title = "Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt",

abstract = "We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10 -5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10-2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized.",

author = "He, {J. H.} and Chang, {P. H.} and Chen, {C. Y.} and Tsai, {K. T.}",

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AB - We report on the transport properties of a single ZnO nanowire (NW) measured as a function of the length/square of the radius ratio via the transmission line method (TLM). The specific contact resistance of FIB-Pt contacts to the ZnO NWs is determined to be as low as 1.1 × 10 -5 Ω cm2. The resistivity of the ZnO NWs is measured to be 2.2 × 10-2 Ω cm. ZnO NW-based UV photodetectors contacted by FIB-Pt with a photoconductive gain as high as ∼108 have been fabricated and characterized.

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Electrical and optoelectronic characterization of a ZnO nanowire contacted by focused-ion-beam-deposited Pt

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