TY - JOUR
T1 - Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon
AU - Ghoneim, Mohamed T.
AU - Rojas, Jhonathan Prieto
AU - Young, Chadwin D.
AU - Bersuker, Gennadi
AU - Hussain, Muhammad Mustafa
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/6
Y1 - 2015/6
N2 - We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.
AB - We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.
UR - http://hdl.handle.net/10754/564182
UR - http://ieeexplore.ieee.org/document/6967871/
UR - http://www.scopus.com/inward/record.url?scp=84930947968&partnerID=8YFLogxK
U2 - 10.1109/TR.2014.2371054
DO - 10.1109/TR.2014.2371054
M3 - Article
SN - 0018-9529
VL - 64
SP - 579
EP - 585
JO - IEEE Transactions on Reliability
JF - IEEE Transactions on Reliability
IS - 2
ER -