Electric fields in AlGaN/GaN quantum well structures

C. McAleese; P. M.F.J. Costa; D. M. Graham; H. Xiu; J. S. Barnard; M. J. Kappers; P. Dawson; M. J. Godfrey; C. J. Humphreys

doi:10.1002/pssb.200565382

Electric fields in AlGaN/GaN quantum well structures

C. McAleese^*, P. M.F.J. Costa, D. M. Graham, H. Xiu, J. S. Barnard, M. J. Kappers, P. Dawson, M. J. Godfrey, C. J. Humphreys

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.

Original language	English (US)
Pages (from-to)	1551-1559
Number of pages	9
Journal	Physica Status Solidi (B) Basic Research
Volume	243
Issue number	7
DOIs	https://doi.org/10.1002/pssb.200565382
State	Published - Jun 2006
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Electric fields in AlGaN/GaN quantum well structures",

abstract = "This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.",

author = "C. McAleese and Costa, {P. M.F.J.} and Graham, {D. M.} and H. Xiu and Barnard, {J. S.} and Kappers, {M. J.} and P. Dawson and Godfrey, {M. J.} and Humphreys, {C. J.}",

year = "2006",

month = jun,

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AU - McAleese, C.

AU - Costa, P. M.F.J.

AU - Graham, D. M.

AU - Xiu, H.

AU - Barnard, J. S.

AU - Kappers, M. J.

AU - Dawson, P.

AU - Godfrey, M. J.

AU - Humphreys, C. J.

PY - 2006/6

Y1 - 2006/6

N2 - This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.

AB - This paper presents a comparative study of the magnitude of the electric fields in AlGaN/GaN quantum well structures, measured using electron holography in a transmission electron microscope and estimated from a comparison of low temperature photoluminescence peak energies with calculated values. The values derived from the two techniques were found to be in reasonable agreement for the structures examined here. A larger field across the GaN well was observed from a single quantum well compared to a 10 period structure with equivalent well thickness, while the presence of an electric field across the barrier of the single quantum well was also detected by electron holography.

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DO - 10.1002/pssb.200565382

M3 - Article

AN - SCOPUS:33745745284

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VL - 243

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 7

ER -

Electric fields in AlGaN/GaN quantum well structures

Abstract

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