We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.
|Original language||English (US)|
|Number of pages||8|
|State||Published - Mar 18 2019|
Bibliographical noteKAUST Repository Item: Exported on 2022-06-07
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics