Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Kareem W. Hamdy; Erin C. Young; Abdullah I. Alhassan; Daniel L. Becerra; Steven P. DenBaars; James S. Speck; Shuji Nakamura

doi:10.1364/OE.27.008327

Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Kareem W. Hamdy, Erin C. Young, Abdullah I. Alhassan, Daniel L. Becerra, Steven P. DenBaars, James S. Speck, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.

Original language	English (US)
Pages (from-to)	8327-8334
Number of pages	8
Journal	OPTICS EXPRESS
Volume	27
Issue number	6
DOIs	https://doi.org/10.1364/OE.27.008327
State	Published - Mar 18 2019
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-07
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.27.008327

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@article{28672ec18e30488994554e72993c9cad,

title = "Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes",

abstract = "We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.",

author = "Hamdy, {Kareem W.} and Young, {Erin C.} and Alhassan, {Abdullah I.} and Becerra, {Daniel L.} and DenBaars, {Steven P.} and Speck, {James S.} and Shuji Nakamura",

note = "KAUST Repository Item: Exported on 2022-06-07 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2019",

month = mar,

day = "18",

doi = "10.1364/OE.27.008327",

language = "English (US)",

volume = "27",

pages = "8327--8334",

journal = "OPTICS EXPRESS",

issn = "1094-4087",

publisher = "Optica Publishing Group",

number = "6",

}

TY - JOUR

T1 - Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

AU - Hamdy, Kareem W.

AU - Young, Erin C.

AU - Alhassan, Abdullah I.

AU - Becerra, Daniel L.

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Nakamura, Shuji

N1 - KAUST Repository Item: Exported on 2022-06-07 Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2019/3/18

Y1 - 2019/3/18

N2 - We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.

AB - We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.

UR - http://hdl.handle.net/10754/678670

UR - https://www.osapublishing.org/abstract.cfm?URI=oe-27-6-8327

UR - http://www.scopus.com/inward/record.url?scp=85063447162&partnerID=8YFLogxK

U2 - 10.1364/OE.27.008327

DO - 10.1364/OE.27.008327

M3 - Article

SN - 1094-4087

VL - 27

SP - 8327

EP - 8334

JO - OPTICS EXPRESS

JF - OPTICS EXPRESS

IS - 6

ER -

Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Abstract

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