Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes

Kareem W. Hamdy, Erin C. Young, Abdullah I. Alhassan, Daniel L. Becerra, Steven P. DenBaars, James S. Speck, Shuji Nakamura

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We demonstrate high-power edge-emitting laser diodes (LDs) with tunnel junction contacts grown by molecular beam epitaxy (MBE). Under pulsed conditions, lower threshold current densities were observed from LDs with MBE-grown tunnel junctions than from similarly fabricated control LDs with ITO contacts. LDs with tunnel junction contacts grown by metal-organic chemical vapor deposition (MOCVD) were additionally demonstrated. These LDs were fabricated using a p-GaN activation scheme utilizing lateral diffusion of hydrogen through the LD ridge sidewalls. Secondary ion mass spectroscopy measurements of the [Si] and [Mg] profiles in the MBE-grown and MOCVD-grown tunnel junctions were conducted to further investigate the results.
Original languageEnglish (US)
Pages (from-to)8327-8334
Number of pages8
Issue number6
StatePublished - Mar 18 2019
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2022-06-07
Acknowledgements: Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB; KACST-KAUST-UCSB Solid State Lighting Program; National Science Foundation Graduate Research Fellowship Program (NSF GRFP) (1650114); National Science Foundation Materials Research Science and Engineering Centers program (MRSEC) (DMR-1720256); National Science Foundation National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765); Advanced Research Projects Agency-Energy (ARPA-E) (DE-AR0000671).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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