We report on novel InGaN/GaN quantum well/polyfluorene heterostructures where efficient Förster energy transfer from the well to the organic layer occurs. We show that Mott-Wannier excitons dominate the quantum well luminescence in the quantum wells in the 77 to at least 225 K range and are responsible for the efficient energy channeling to the polyfluorene films. © 2007 American Institute of Physics.
|Original language||English (US)|
|Title of host publication||AIP Conference Proceedings|
|State||Published - Dec 1 2007|