Efficient and Stable Solution-Processed Organic Light Emitting Transistors using a High-k Dielectric

Sungho Nam; Mujeeb Ullah Chaudhry; Kornelius Tetzner; Christopher Pearson; Chris Groves; Michael C. Petty; Thomas D. Anthopoulos; Donal Bradley

doi:10.1021/acsphotonics.9b01265

Efficient and Stable Solution-Processed Organic Light Emitting Transistors using a High-k Dielectric

Sungho Nam, Mujeeb Ullah Chaudhry, Kornelius Tetzner, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, Donal Bradley

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report the development of highly efficient and stable solution-processed organic light emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride0.62-trifluoroethylene0.31-chlorotrifluoroethylene0.7) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of the poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b’]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge transporting and light emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (≈2 mA) and lower operating voltages (-35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of ≈0.88 % at a luminance L ≥ 2000 cd m−2. Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.

Original language	English (US)
Pages (from-to)	3159-3165
Number of pages	7
Journal	ACS Photonics
Volume	6
Issue number	12
DOIs	https://doi.org/10.1021/acsphotonics.9b01265
State	Published - Nov 12 2019

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: SN and DDCB thank the University of Oxford for postdoctoral research fellowship funding together with laboratory infrastructure and other research support. MUC acknowledges provision of a starting grant from Durham University and travel and subsistence support from
the University of Oxford. KT and TDA further thank the European Union Horizon 2020 People Programme (Marie Curie Actions grant N°658563, ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC)), and the King Abdullah University of Science and
Technology (KAUST) for financial support.

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10.1021/acsphotonics.9b01265

https://repository.kaust.edu.sa/bitstream/10754/660000/1/acsphotonics.9b01265.pdf

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@article{9efe919905d543d6900826d93054d7a3,

title = "Efficient and Stable Solution-Processed Organic Light Emitting Transistors using a High-k Dielectric",

abstract = "We report the development of highly efficient and stable solution-processed organic light emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride0.62-trifluoroethylene0.31-chlorotrifluoroethylene0.7) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of the poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b{\textquoteright}]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge transporting and light emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (≈2 mA) and lower operating voltages (-35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of ≈0.88 % at a luminance L ≥ 2000 cd m−2. Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.",

author = "Sungho Nam and Chaudhry, {Mujeeb Ullah} and Kornelius Tetzner and Christopher Pearson and Chris Groves and Petty, {Michael C.} and Anthopoulos, {Thomas D.} and Donal Bradley",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SN and DDCB thank the University of Oxford for postdoctoral research fellowship funding together with laboratory infrastructure and other research support. MUC acknowledges provision of a starting grant from Durham University and travel and subsistence support from the University of Oxford. KT and TDA further thank the European Union Horizon 2020 People Programme (Marie Curie Actions grant N°658563, {\textquoteleft}{\textquoteleft}Flexible Complementary Hybrid Integrated Circuits{\textquoteright}{\textquoteright} (FlexCHIC)), and the King Abdullah University of Science and Technology (KAUST) for financial support.",

year = "2019",

month = nov,

day = "12",

doi = "10.1021/acsphotonics.9b01265",

language = "English (US)",

volume = "6",

pages = "3159--3165",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "12",

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TY - JOUR

T1 - Efficient and Stable Solution-Processed Organic Light Emitting Transistors using a High-k Dielectric

AU - Nam, Sungho

AU - Chaudhry, Mujeeb Ullah

AU - Tetzner, Kornelius

AU - Pearson, Christopher

AU - Groves, Chris

AU - Petty, Michael C.

AU - Anthopoulos, Thomas D.

AU - Bradley, Donal

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: SN and DDCB thank the University of Oxford for postdoctoral research fellowship funding together with laboratory infrastructure and other research support. MUC acknowledges provision of a starting grant from Durham University and travel and subsistence support from the University of Oxford. KT and TDA further thank the European Union Horizon 2020 People Programme (Marie Curie Actions grant N°658563, ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC)), and the King Abdullah University of Science and Technology (KAUST) for financial support.

PY - 2019/11/12

Y1 - 2019/11/12

N2 - We report the development of highly efficient and stable solution-processed organic light emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride0.62-trifluoroethylene0.31-chlorotrifluoroethylene0.7) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of the poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b’]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge transporting and light emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (≈2 mA) and lower operating voltages (-35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of ≈0.88 % at a luminance L ≥ 2000 cd m−2. Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.

AB - We report the development of highly efficient and stable solution-processed organic light emitting transistors (OLETs) that combine a polymer heterostructure with the transparent high-k dielectric poly(vinylidenefluoride0.62-trifluoroethylene0.31-chlorotrifluoroethylene0.7) (P(VDF-TrFE-CTFE)). The polymer heterostructure comprises of the poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b’]dithiophen-2-yl)-alt-[1,2,5]thiadiazolo[3,4-c]pyridine] (PCDTPT) and Super Yellow as charge transporting and light emitting layers, respectively. Device characterization shows that the use of P(VDF-TrFE-CTFE) leads to larger channel currents (≈2 mA) and lower operating voltages (-35 V) than for previously reported polymer based OLETs. Furthermore, the combined transparency of the dielectric and gate electrode, results in efficient bottom emission with external quantum efficiency of ≈0.88 % at a luminance L ≥ 2000 cd m−2. Importantly, the resulting OLETs exhibit excellent shelf life and operational stability. The present work represents a significant step forward in the pursuit of all-solution-processed OLET technology for lighting and display applications.

UR - http://hdl.handle.net/10754/660000

UR - https://pubs.acs.org/doi/10.1021/acsphotonics.9b01265

UR - http://www.scopus.com/inward/record.url?scp=85075602841&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.9b01265

DO - 10.1021/acsphotonics.9b01265

M3 - Article

SN - 2330-4022

VL - 6

SP - 3159

EP - 3165

JO - ACS Photonics

JF - ACS Photonics

IS - 12

ER -

Efficient and Stable Solution-Processed Organic Light Emitting Transistors using a High-k Dielectric

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