Abstract
Atomic layer deposition (ALD) was used to grow both PbS quantum dots and Al2O3 barrier layers in a solid-state quantum dot-sensitized solar cell (QDSSC). Barrier layers grown prior to quantum dots resulted in a near-doubling of device efficiency (0.30% to 0.57%) whereas barrier layers grown after quantum dots did not improve efficiency, indicating the importance of quantum dots in recombination processes. © 2013 The Royal Society of Chemistry.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 7566 |
| Journal | Journal of Materials Chemistry A |
| Volume | 1 |
| Issue number | 26 |
| DOIs | |
| State | Published - 2013 |
| Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-C1-015-21
Acknowledgements: This publication was based on work supported by the Center for Advanced Molecular Photovoltaics (Award no. KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST). F.B.P. and O.T. gratefully acknowledge support for ALD PbS deposition from the Center on Nanostructuring for Efficient Energy Conversion (CNEEC) at Stanford University, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number DE-SC0001060. T.P.B. would like to thank the Albion Walter Hewlett Fellowship for financial support. We would like to thank Professor Michael McGehee for use of lab equipment and Colin Bailie, Dr Eric Hoke, and George Margulis for training on transient photovoltage measurements. We would like to thank the Stanford Nanocharacterization Laboratory (SNL) staff for their support.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.