Efficiency dip observed with InGaN-based multiple quantum well solar cells

Kunyu Lai, G. J. Lin, Yuhrenn Wu, Menglun Tsai, Jr-Hau He

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
Original languageEnglish (US)
Pages (from-to)A1753
JournalOptics Express
Issue numberS7
StatePublished - Oct 29 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics


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