Efficiency dip observed with InGaN-based multiple quantum well solar cells

Kunyu Lai; G. J. Lin; Yuhrenn Wu; Menglun Tsai; Jr-Hau He

doi:10.1364/OE.22.0A1753

Efficiency dip observed with InGaN-based multiple quantum well solar cells

Kunyu Lai, G. J. Lin, Yuhrenn Wu, Menglun Tsai, Jr-Hau He

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

Original language	English (US)
Pages (from-to)	A1753
Journal	Optics Express
Volume	22
Issue number	S7
DOIs	https://doi.org/10.1364/OE.22.0A1753
State	Published - Oct 29 2014

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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10.1364/OE.22.0A1753

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title = "Efficiency dip observed with InGaN-based multiple quantum well solar cells",

abstract = "The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.",

author = "Kunyu Lai and Lin, {G. J.} and Yuhrenn Wu and Menglun Tsai and Jr-Hau He",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).",

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doi = "10.1364/OE.22.0A1753",

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T1 - Efficiency dip observed with InGaN-based multiple quantum well solar cells

AU - Lai, Kunyu

AU - Lin, G. J.

AU - Wu, Yuhrenn

AU - Tsai, Menglun

AU - He, Jr-Hau

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).

PY - 2014/10/29

Y1 - 2014/10/29

N2 - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

AB - The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.

UR - http://hdl.handle.net/10754/563268

UR - https://www.osapublishing.org/oe/abstract.cfm?uri=oe-22-S7-A1753

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U2 - 10.1364/OE.22.0A1753

DO - 10.1364/OE.22.0A1753

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SN - 1094-4087

VL - 22

SP - A1753

JO - Optics Express

JF - Optics Express

IS - S7

ER -

Efficiency dip observed with InGaN-based multiple quantum well solar cells

Abstract

Bibliographical note

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