The dip of external quantum efficiency (EQE) is observed on In0.15Ga0.85N/GaN multiple quantum well (MQW) solar cells upon the increase of incident optical power density. With indium composition increased to 25%, the EQE dip becomes much less noticeable. The composition dependence of EQE dip is ascribed to the competition between radiative recombination and photocurrent generation in the active region, which are dictated by quantum-confined Stark effect (QCSE) and composition fluctuation in the MQWs.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The research was supported in part by National Science Council (102-2221-E-008-074, 102-2628-M-002-006-MY3 and 101-2221-E-002-115-MY2), National Taiwan University (103R7823), the Aim for the Top University Project of National Central University (103G903-2), and Energy Technology Program for Academia, Bureau of Energy, Ministry of Economic Affairs (102-E0606).
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics