Effects of the surface roughness of plastic-compatible inorganic dielectrics on polymeric thin film transistors

Michael L. Chabinyc; Rene Lujan; Fred Endicott; Michael F. Toney; Iain McCulloch; Martin Heeney

doi:10.1063/1.2746955

Effects of the surface roughness of plastic-compatible inorganic dielectrics on polymeric thin film transistors

Michael L. Chabinyc, Rene Lujan, Fred Endicott, Michael F. Toney, Iain McCulloch, Martin Heeney

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2- yl)thieno[3,2- b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited Si O2 Si Nx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric. © 2007 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	90
Issue number	23
DOIs	https://doi.org/10.1063/1.2746955
State	Published - Jun 27 2007
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effects of the surface roughness of plastic-compatible inorganic dielectrics on polymeric thin film transistors",

abstract = "The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2- yl)thieno[3,2- b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited Si O2 Si Nx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric. {\textcopyright} 2007 American Institute of Physics.",

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AU - Chabinyc, Michael L.

AU - Lujan, Rene

AU - Endicott, Fred

AU - Toney, Michael F.

AU - McCulloch, Iain

AU - Heeney, Martin

N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14

PY - 2007/6/27

Y1 - 2007/6/27

N2 - The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2- yl)thieno[3,2- b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited Si O2 Si Nx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric. © 2007 American Institute of Physics.

AB - The effects of the roughness of the gate dielectric on the performance of thin film transistors (TFTs) fabricated with poly(2,5-bis(3-hexadecylthiophen-2- yl)thieno[3,2- b] thiophene) (PBTTT-C16) were examined. The field effect mobility of coplanar TFTs made with PBTTT-C16 and plasma-enhanced chemical vapor deposited Si O2 Si Nx dielectrics decreased nearly exponentially with surface roughness. Films of PBTTT-C16 have similar crystalline structure on smooth and rough surfaces, but the domain size decreases with increasing roughness. Surface roughness was found to have less of an impact on field effect mobility than the chemical treatment of the dielectric. © 2007 American Institute of Physics.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Effects of the surface roughness of plastic-compatible inorganic dielectrics on polymeric thin film transistors

Abstract

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