Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

Katherine E. Roelofs; Thomas P. Brennan; Orlando Trejo; John Xu; Fritz B. Prinz; Stacey F. Bent

doi:10.1109/PVSC.2013.6744328

Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

Katherine E. Roelofs, Thomas P. Brennan, Orlando Trejo, John Xu, Fritz B. Prinz, Stacey F. Bent

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.

Original language	English (US)
Title of host publication	2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1080-1083
Number of pages	4
ISBN (Print)	9781479932993
DOIs	https://doi.org/10.1109/PVSC.2013.6744328
State	Published - Jun 2013
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: We would like to thank the McGehee group at Stanford for the use of materials, equipment and expertise with the transient photovoltage measurements, and the Grätzel group at EPFL for supplying the 45 nm TiO2 paste. The quantum dot synthesis work was funded as part of the Center on Nanostructuring for Efficient Energy Conversion at Stanford University, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001060. The device fabrication and mesurement work was supported by the Center for Advanced Molecular Photovoltaics, made by the King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1109/PVSC.2013.6744328

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@inproceedings{0e9b6803e3de4ca5b851a3c05c00d5d4,

title = "Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells",

abstract = "Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. {\textcopyright} 2013 IEEE.",

author = "Roelofs, {Katherine E.} and Brennan, {Thomas P.} and Orlando Trejo and John Xu and Prinz, {Fritz B.} and Bent, {Stacey F.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We would like to thank the McGehee group at Stanford for the use of materials, equipment and expertise with the transient photovoltage measurements, and the Gr{\"a}tzel group at EPFL for supplying the 45 nm TiO2 paste. The quantum dot synthesis work was funded as part of the Center on Nanostructuring for Efficient Energy Conversion at Stanford University, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001060. The device fabrication and mesurement work was supported by the Center for Advanced Molecular Photovoltaics, made by the King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2013",

month = jun,

doi = "10.1109/PVSC.2013.6744328",

language = "English (US)",

isbn = "9781479932993",

pages = "1080--1083",

booktitle = "2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

}

Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells. / Roelofs, Katherine E.; Brennan, Thomas P.; Trejo, Orlando et al.
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). Institute of Electrical and Electronics Engineers (IEEE), 2013. p. 1080-1083.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

AU - Roelofs, Katherine E.

AU - Brennan, Thomas P.

AU - Trejo, Orlando

AU - Xu, John

AU - Prinz, Fritz B.

AU - Bent, Stacey F.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: We would like to thank the McGehee group at Stanford for the use of materials, equipment and expertise with the transient photovoltage measurements, and the Grätzel group at EPFL for supplying the 45 nm TiO2 paste. The quantum dot synthesis work was funded as part of the Center on Nanostructuring for Efficient Energy Conversion at Stanford University, an Energy Frontier Research Center funded by the US Department of Energy, Office of Science, Office of Basic Energy Sciences under Award No. DE-SC0001060. The device fabrication and mesurement work was supported by the Center for Advanced Molecular Photovoltaics, made by the King Abdullah University of Science and Technology (KAUST). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2013/6

Y1 - 2013/6

N2 - Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.

AB - Lead sulfide quantum dots (QDs) were grown in situ on nanoporous TiO 2 by successive ion layer adsorption and reaction (SILAR) and by atomic layer deposition (ALD), to fabricate solid-state quantum-dot sensitized solar cells (QDSSCs). With the ultimate goal of increasing QD surface coverage, this work compares the impact of these two synthetic routes on the light absorption and electrical properties of devices. A higher current density was observed in the SILAR-grown QD devices under reverse bias, as compared to ALD-grown QD devices, attributed to injection problems of the lower-band-gap QDs present in the SILAR-grown QD device. To understand the effects of QD surface coverage on device performance, particularly interfacial recombination, electron lifetimes were measured for varying QD deposition cycles. Electron lifetimes were found to decrease with increasing SILAR cycles, indicating that the expected decrease in recombination between electrons in the TiO2 and holes in the hole-transport material, due to increased QD surface coverage, is not the dominant effect of increased deposition cycles. © 2013 IEEE.

UR - http://hdl.handle.net/10754/598084

UR - http://ieeexplore.ieee.org/document/6744328/

UR - http://www.scopus.com/inward/record.url?scp=84896450138&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2013.6744328

DO - 10.1109/PVSC.2013.6744328

M3 - Conference contribution

SN - 9781479932993

SP - 1080

EP - 1083

BT - 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells

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