Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

Zhiyuan Gao; Jun Zhou; Yudong Gu; Peng Fei; Yue Hao; Gang Bao; Zhong Lin Wang

doi:10.1063/1.3125449

Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

Zhiyuan Gao, Jun Zhou, Yudong Gu, Peng Fei, Yue Hao, Gang Bao, Zhong Lin Wang

Research output: Contribution to journal › Article › peer-review

188 Scopus citations

Abstract

We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.

Original language	English (US)
Pages (from-to)	113707
Journal	Journal of Applied Physics
Volume	105
Issue number	11
DOIs	https://doi.org/10.1063/1.3125449
State	Published - Jun 6 2009
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, Grant No. W31P4Q-08-1-0009), BES DOE (Grant No. DE-FG02-07ER46394), Air Force Office (Grant No. FA9550-08-1-0446), DARPA/ARO Grant No. W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, EmoryGeorgia Tech CCNE from NIH (Grant No. CA119338), and NSF (Grant Nos. DMS 0706436 and CMMI 0403671). Z.Y.G., Y.D.G., and P. F. thank the partial fellowship support by the China Scholarship Council (CSC) (Grant No. 20073020)
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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title = "Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor",

abstract = "We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.",

author = "Zhiyuan Gao and Jun Zhou and Yudong Gu and Peng Fei and Yue Hao and Gang Bao and Wang, {Zhong Lin}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, Grant No. W31P4Q-08-1-0009), BES DOE (Grant No. DE-FG02-07ER46394), Air Force Office (Grant No. FA9550-08-1-0446), DARPA/ARO Grant No. W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, EmoryGeorgia Tech CCNE from NIH (Grant No. CA119338), and NSF (Grant Nos. DMS 0706436 and CMMI 0403671). Z.Y.G., Y.D.G., and P. F. thank the partial fellowship support by the China Scholarship Council (CSC) (Grant No. 20073020) This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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AU - Bao, Gang

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N2 - We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.

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Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor

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