We have investigated the effects of piezoelectric potential in a ZnO nanowire on the transport characteristics of the nanowire based field effect transistor through numerical calculations and experimental observations. Under different straining conditions including stretching, compressing, twisting, and their combination, a piezoelectric potential is created throughout the nanowire to modulatealternate the transport property of the metal-ZnO nanowire contacts, resulting in a switch between symmetric and asymmetric contacts at the two ends, or even turning an Ohmic contact type into a diode. The commonly observed natural rectifying behavior of the as-fabricated ZnO nanowire can be attributed to the strain that was unpurposely created in the nanowire during device fabrication and material handling. This work provides further evidence on piezopotential governed electronic transport and devices, e.g., piezotronics.
Bibliographical noteKAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Research supported by DARPA (Army/AMCOM/REDSTONE AR, Grant No. W31P4Q-08-1-0009), BES DOE (Grant No. DE-FG02-07ER46394), Air Force Office (Grant No. FA9550-08-1-0446), DARPA/ARO Grant No. W911NF-08-1-0249, KAUST Global Research Partnership, World Premier International Research Center (WPI) Initiative on Materials Nanoarchitectonics, MEXT, Japan, EmoryGeorgia Tech CCNE from NIH (Grant No. CA119338), and NSF (Grant Nos. DMS 0706436 and CMMI 0403671). Z.Y.G., Y.D.G., and P. F. thank the partial fellowship support by the China Scholarship Council (CSC) (Grant No. 20073020)
This publication acknowledges KAUST support, but has no KAUST affiliated authors.