Effects of metal gate-induced strain on the performance of metal-oxide-semiconductor field effect transistors with titanium nitride gate electrode and hafnium oxide dielectric

Chang Yong Kang*, Rino Choi, Muhammad Mustafa Hussain, Jinguo Wang, Young Jun Suh, H. C. Floresca, Moon J. Kim, Jiyoung Kim, Byoung Hun Lee, Raj Jammy

*Corresponding author for this work

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In this letter, the authors investigate the strain induced by titanium nitride (TiN) electrode and effective work function (EWF) tuning for metal-oxide-semiconductor field effect transistors (MOSFETs). Scaling of TiN thickness was found to be effective both in increasing tensile stress on Si substrates and in lowering the EWF of metal gate n -MOSFETs. The device with 3 nm TiN as a gate electrode showed favorable threshold voltage (Vth) for n -MOSFETs as well as higher channel electron mobility by 17% compared to the device with 20 nm TiN film.

Original languageEnglish (US)
Article number033511
JournalApplied Physics Letters
Issue number3
StatePublished - Aug 1 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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