TY - JOUR
T1 - Effects of electrolyte gating on photoluminescence spectra of large-area WSe2monolayer films
AU - Matsuki, Keiichiro
AU - Pu, Jiang
AU - Kozawa, Daichi
AU - Matsuda, Kazunari
AU - Li, Lain-Jong
AU - Takenobu, Taishi
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2016/5/24
Y1 - 2016/5/24
N2 - We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.
AB - We fabricated electric double-layer transistors comprising large-area WSe2 monolayers and investigated the effects of electrolyte gating on their photoluminescence (PL) spectra. Using the efficient gating effects of electric double layers, we succeeded in the application of a large electric field (>107Vcm%1) and the accumulation of high carrier density (>1013cm%2). As a result, we observed PL spectra based on both positively and negatively charged excitons and their gate-voltage-dependent redshifts, suggesting the effects of both an electric field and charge accumulation. © 2016 The Japan Society of Applied Physics.
UR - http://hdl.handle.net/10754/621540
UR - https://iopscience.iop.org/article/10.7567/JJAP.55.06GB02
UR - http://www.scopus.com/inward/record.url?scp=84974533894&partnerID=8YFLogxK
U2 - 10.7567/JJAP.55.06GB02
DO - 10.7567/JJAP.55.06GB02
M3 - Article
SN - 0021-4922
VL - 55
SP - 06GB02
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 6S1
ER -