Effective work function modification of atomic-layer-deposited-TaN film by capping layer

K. Choi; H. N. Alshareef; H. C. Wen; H. Harris; H. Luan; Y. Senzaki; P. Lysaght; P. Majhi; B. H. Lee

doi:10.1063/1.2234288

Effective work function modification of atomic-layer-deposited-TaN film by capping layer

K. Choi^*, H. N. Alshareef, H. C. Wen, H. Harris, H. Luan, Y. Senzaki, P. Lysaght, P. Majhi, B. H. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.

Original language	English (US)
Article number	032113
Journal	Applied Physics Letters
Volume	89
Issue number	3
DOIs	https://doi.org/10.1063/1.2234288
State	Published - 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Effective work function modification of atomic-layer-deposited-TaN film by capping layer",

abstract = "We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.",

author = "K. Choi and Alshareef, {H. N.} and Wen, {H. C.} and H. Harris and H. Luan and Y. Senzaki and P. Lysaght and P. Majhi and Lee, {B. H.}",

year = "2006",

doi = "10.1063/1.2234288",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Effective work function modification of atomic-layer-deposited-TaN film by capping layer

AU - Choi, K.

AU - Alshareef, H. N.

AU - Wen, H. C.

AU - Harris, H.

AU - Luan, H.

AU - Senzaki, Y.

AU - Lysaght, P.

AU - Majhi, P.

AU - Lee, B. H.

PY - 2006

Y1 - 2006

N2 - We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.

AB - We demonstrate that the metallic capping layer has a strong impact on the effective work function (EWF) of the metal gate. Specifically, the EWF of atomic-layer-deposited (ALD)-TaN could be increased from 4.5 to 4.8 eV with chemical-vapor-deposited-TiN capping, which is sufficient amount of work function modification for silicon on insulator based devices. A strong interdiffusion of Ti atoms into the ALD-TaN film is observed and correlated well with the changes in the EWF change. Ti capping experiments confirm that the Ti interdiffusion can actually modify the EWF of Ti/ALD-TaN stack.

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U2 - 10.1063/1.2234288

DO - 10.1063/1.2234288

M3 - Article

AN - SCOPUS:33746322324

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032113

ER -

Effective work function modification of atomic-layer-deposited-TaN film by capping layer

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