Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Adel Najar; Ahmad Al-Jabr; Mohammad Alsunaidi; Dalaver H. Anjum; Tien Khee Ng; Boon S. Ooi; Ahmed Ben Slimane; Rachid Sougrat

doi:10.1109/SIECPC.2013.6550769

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Adel Najar, Ahmad Al-Jabr, Mohammad Alsunaidi, Dalaver H. Anjum, Tien Khee Ng, Boon S. Ooi, Ahmed Ben Slimane, Rachid Sougrat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of

Original language	English (US)
Title of host publication	2013 Saudi International Electronics, Communications and Photonics Conference
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
ISBN (Print)	9781467361958
DOIs	https://doi.org/10.1109/SIECPC.2013.6550769
State	Published - Jul 11 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

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10.1109/SIECPC.2013.6550769

https://repository.kaust.edu.sa/bitstream/10754/310648/1/06550769.pdf

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Najar, A., Al-Jabr, A., Alsunaidi, M., Anjum, D. H., Ng, T. K., Ooi, B. S., Ben Slimane, A., & Sougrat, R. (2013). Effective antireflection properties of porous silicon nanowires for photovoltaic applications. In 2013 Saudi International Electronics, Communications and Photonics Conference Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIECPC.2013.6550769

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title = "Effective antireflection properties of porous silicon nanowires for photovoltaic applications",

abstract = "Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of",

author = "Adel Najar and Ahmad Al-Jabr and Mohammad Alsunaidi and Anjum, {Dalaver H.} and Ng, {Tien Khee} and Ooi, {Boon S.} and {Ben Slimane}, Ahmed and Rachid Sougrat",

note = "KAUST Repository Item: Exported on 2020-10-01",

year = "2013",

month = jul,

day = "11",

doi = "10.1109/SIECPC.2013.6550769",

language = "English (US)",

isbn = "9781467361958",

booktitle = "2013 Saudi International Electronics, Communications and Photonics Conference",

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Najar, A, Al-Jabr, A, Alsunaidi, M, Anjum, DH, Ng, TK , Ooi, BS, Ben Slimane, A & Sougrat, R 2013, Effective antireflection properties of porous silicon nanowires for photovoltaic applications. in 2013 Saudi International Electronics, Communications and Photonics Conference. Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/SIECPC.2013.6550769

Effective antireflection properties of porous silicon nanowires for photovoltaic applications. / Najar, Adel; Al-Jabr, Ahmad; Alsunaidi, Mohammad et al.
2013 Saudi International Electronics, Communications and Photonics Conference. Institute of Electrical and Electronics Engineers (IEEE), 2013.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Effective antireflection properties of porous silicon nanowires for photovoltaic applications

AU - Najar, Adel

AU - Al-Jabr, Ahmad

AU - Alsunaidi, Mohammad

AU - Anjum, Dalaver H.

AU - Ng, Tien Khee

AU - Ooi, Boon S.

AU - Ben Slimane, Ahmed

AU - Sougrat, Rachid

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/7/11

Y1 - 2013/7/11

N2 - Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of

AB - Porous silicon nanowires (PSiNWs) have been prepared by metal-assisted chemical etching method on the n-Si substrate. The presence of nano-pores with pore size ranging between 10-50nm in SiNWs was confirmed by electron tomography (ET) in the transmission electron microscope (TEM). The PSiNWs give strong photoluminescence peak at red wavelength. Ultra-low reflectance of

UR - http://hdl.handle.net/10754/310648

UR - http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=6550769

UR - http://www.scopus.com/inward/record.url?scp=84881433100&partnerID=8YFLogxK

U2 - 10.1109/SIECPC.2013.6550769

DO - 10.1109/SIECPC.2013.6550769

M3 - Conference contribution

SN - 9781467361958

BT - 2013 Saudi International Electronics, Communications and Photonics Conference

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Effective antireflection properties of porous silicon nanowires for photovoltaic applications

Abstract

Bibliographical note

UN SDGs

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