Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)

Robyn L. Woo; Rui Xiao; Yoji Kobayashi; Li Gao; Niti Goel; Mantu K. Hudait; Thomas E. Mallouk; R. F. Hicks

doi:10.1021/nl802433u

Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)

Robyn L. Woo, Rui Xiao, Yoji Kobayashi, Li Gao, Niti Goel, Mantu K. Hudait, Thomas E. Mallouk, R. F. Hicks

Research output: Contribution to journal › Article › peer-review

75 Scopus citations

Abstract

The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indium catalyst. Room temperature photoluminescence from the defect-free nanowires is ∼7 times more intense than that from the wires with twin boundaries. An open-circuit photovoltage of 100 mV is observed for photoelectrochemical cells made with the defect-free nanowires, whereas no photovoltage is recorded for those with twins. © 2008 American Chemical Society.

Original language	English (US)
Pages (from-to)	4664-4669
Number of pages	6
Journal	Nano Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1021/nl802433u
State	Published - Dec 1 2008
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2022-09-13

ASJC Scopus subject areas

Bioengineering
General Materials Science
General Chemistry
Mechanical Engineering
Condensed Matter Physics

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title = "Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)",

abstract = "The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indium catalyst. Room temperature photoluminescence from the defect-free nanowires is ∼7 times more intense than that from the wires with twin boundaries. An open-circuit photovoltage of 100 mV is observed for photoelectrochemical cells made with the defect-free nanowires, whereas no photovoltage is recorded for those with twins. {\textcopyright} 2008 American Chemical Society.",

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T1 - Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)

AU - Woo, Robyn L.

AU - Xiao, Rui

AU - Kobayashi, Yoji

AU - Gao, Li

AU - Goel, Niti

AU - Hudait, Mantu K.

AU - Mallouk, Thomas E.

AU - Hicks, R. F.

N1 - Generated from Scopus record by KAUST IRTS on 2022-09-13

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indium catalyst. Room temperature photoluminescence from the defect-free nanowires is ∼7 times more intense than that from the wires with twin boundaries. An open-circuit photovoltage of 100 mV is observed for photoelectrochemical cells made with the defect-free nanowires, whereas no photovoltage is recorded for those with twins. © 2008 American Chemical Society.

AB - The relationship between crystal quality and the properties of indium phosphide nanowires grown on silicon (111) has been studied by transmission electron microscopy, photoluminescence spectroscopy, and photoelectrochemistry. Wires with no defects and with {111} twin boundaries parallel and perpendicular to the growth direction were obtained by metalorganic vapor-phase epitaxy using liquid indium catalyst. Room temperature photoluminescence from the defect-free nanowires is ∼7 times more intense than that from the wires with twin boundaries. An open-circuit photovoltage of 100 mV is observed for photoelectrochemical cells made with the defect-free nanowires, whereas no photovoltage is recorded for those with twins. © 2008 American Chemical Society.

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U2 - 10.1021/nl802433u

DO - 10.1021/nl802433u

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JO - Nano Letters

JF - Nano Letters

IS - 12

ER -

Effect of twinning on the photoluminescence and photoelectrochemical properties of indium phosphide nanowires grown on silicon (111)

Abstract

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