Glasses with compositions (40 - x)PbO - xZnO - 60(B2O 3 - SiO2) (x = 5, 10, 15, 20) have been prepared. Substitution of ZnO for PbO increased glass bandgap (Eg) and crystallization ability greatly. Crystalline phases of bulk glasses after rapid thermal processing (RTP) were identified by X-ray diffraction (XRD). Transmission line model (TLM) was employed to measure the electrical performance of Ag electrodes screen printed on polycrystalline Si substrates using Ag thick-film pastes and by RTP. The conductivity (σ) decreased while specific contact resistance (ρc) was not monotonic varied with increasing ZnO content. The correlation between electrical performance and glass barrier formed on the Ag gridline and Si emitter interface has been investigated.
Bibliographical noteFunding Information:
This work was supported by the Science and Technology Commission of Shanghai (project 05dz12019 ). We thank Shanghai Perfect Energy Co., Ltd. for the help in the fabrication of test cells. YZ also thanks the NSF's IMI-NFG for the exchange visit (DMR-0409588).
- Ag/Si contacts
- Polycrystalline Si
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry