Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL

M. S. Khairul Anuar; A. Mohd Sharizal; S. M. Mitani; Y. Mohamed Razman; A. F. Awang Mat; P. K. Choudhury

doi:10.1109/SMELEC.2006.381084

Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL

M. S. Khairul Anuar^*, A. Mohd Sharizal, S. M. Mitani, Y. Mohamed Razman, A. F. Awang Mat, P. K. Choudhury

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.

Original language	English (US)
Title of host publication	ICSE 2006
Subtitle of host publication	2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	373-377
Number of pages	5
DOIs	https://doi.org/10.1109/SMELEC.2006.381084
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia Duration: Nov 29 2006 → Dec 1 2006

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other	2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/29/06 → 12/1/06

ASJC Scopus subject areas

General Engineering

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10.1109/SMELEC.2006.381084

Cite this

Khairul Anuar, M. S., Mohd Sharizal, A., Mitani, S. M., Mohamed Razman, Y., Awang Mat, A. F., & Choudhury, P. K. (2006). Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings (pp. 373-377). Article 4266634 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). https://doi.org/10.1109/SMELEC.2006.381084

@inproceedings{93496c6b2e88461bb1116b018b187d29,

title = "Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL",

abstract = "The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.",

author = "{Khairul Anuar}, {M. S.} and {Mohd Sharizal}, A. and Mitani, {S. M.} and {Mohamed Razman}, Y. and {Awang Mat}, {A. F.} and Choudhury, {P. K.}",

year = "2006",

doi = "10.1109/SMELEC.2006.381084",

language = "English (US)",

isbn = "0780397312",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "373--377",

booktitle = "ICSE 2006",

note = "2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 ; Conference date: 29-11-2006 Through 01-12-2006",

}

Khairul Anuar, MS, Mohd Sharizal, A, Mitani, SM, Mohamed Razman, Y, Awang Mat, AF & Choudhury, PK 2006, Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. in ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings., 4266634, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 373-377, 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006, Kuala Lumpur, Malaysia, 11/29/06. https://doi.org/10.1109/SMELEC.2006.381084

Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. / Khairul Anuar, M. S.; Mohd Sharizal, A.; Mitani, S. M. et al.
ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 373-377 4266634 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Mohd Sharizal, A.

AU - Mitani, S. M.

AU - Mohamed Razman, Y.

AU - Awang Mat, A. F.

AU - Choudhury, P. K.

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AB - The paper deals with the development of Ni/Au/Ge/Au ohmic contacts for the fabrication of VCSELs to be operated in the 980 nm of the electromagnetic (EM) spectrum. The VCSEL structures are grown by the process of molecular beam epitaxy (MBE) whereas the contacts are deposited by electron beam evaporator. The n-contact metallization has been performed along with RTA before as well as after the fabrication of the VCSEL structure, and the effect of RTA treatment on the grown VCSEL has been studied in the different cases.

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DO - 10.1109/SMELEC.2006.381084

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T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 373

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Khairul Anuar MS, Mohd Sharizal A, Mitani SM, Mohamed Razman Y, Awang Mat AF, Choudhury PK. Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL. In ICSE 2006: 2006 IEEE International Conference on Semiconductor Electronics, Proceedings. 2006. p. 373-377. 4266634. (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). doi: 10.1109/SMELEC.2006.381084

Effect of Rapid Thermal Annealing (RTA) on n-contact of 980 nm oxide VCSEL

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