Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

W. K. Loke; S. F. Yoon; T. K. Ng; S. Z. Wang; W. J. Fan

doi:10.1116/1.1508818

Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

W. K. Loke, S. F. Yoon^*, T. K. Ng, S. Z. Wang, W. J. Fan

^*Corresponding author for this work

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10 Scopus citations

Abstract

The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.

Original language	English (US)
Pages (from-to)	2091-2095
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1508818
State	Published - Sep 2002
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1508818

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Loke, W. K., Yoon, S. F., Ng, T. K., Wang, S. Z., & Fan, W. J. (2002). Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(5), 2091-2095. https://doi.org/10.1116/1.1508818

@article{22797af418f94492adf9c0f7bfba9cc4,

title = "Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy",

abstract = "The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.",

author = "Loke, {W. K.} and Yoon, {S. F.} and Ng, {T. K.} and Wang, {S. Z.} and Fan, {W. J.}",

year = "2002",

month = sep,

doi = "10.1116/1.1508818",

language = "English (US)",

volume = "20",

pages = "2091--2095",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "5",

}

Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy. / Loke, W. K.; Yoon, S. F.; Ng, T. K. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5, 09.2002, p. 2091-2095.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

AU - Loke, W. K.

AU - Yoon, S. F.

AU - Ng, T. K.

AU - Wang, S. Z.

AU - Fan, W. J.

PY - 2002/9

Y1 - 2002/9

N2 - The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.

AB - The growth of GaInNAs with different In and N composition on GaAs substrate and its effect on XRD-FWHM and low-temperature PL peak wavelength is presented. It is shown that when higher rf plasma power is used to grow GaInNAs with N content exceeding 2.6%, an abrupt increase in XRD-FWHM is observed. It is believed that the rapid degradation in GaInNAs crystal quality at high rf plasma power is due to greater incorporation of N as interstitials.

UR - http://www.scopus.com/inward/record.url?scp=0036026402&partnerID=8YFLogxK

U2 - 10.1116/1.1508818

DO - 10.1116/1.1508818

M3 - Article

AN - SCOPUS:0036026402

SN - 1071-1023

VL - 20

SP - 2091

EP - 2095

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Effect of In and N incorporation on the properties of lattice-matched GaInNAs/GaAs grown by radio frequency plasma-assisted solid-source molecular beam epitaxy

Abstract

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