Effect of in and N incorporation on the GaInNAs VCSELs

Nor Azlian Abdul Manaf; Mohd Sharizal Alias; Sufian Mousa Mithani; Mohamed Razman Yahya; Abdul Fatah Awang Mat

Effect of in and N incorporation on the GaInNAs VCSELs

Nor Azlian Abdul Manaf, Mohd Sharizal Alias, Sufian Mousa Mithani, Mohamed Razman Yahya, Abdul Fatah Awang Mat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga_0.58In_0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials

Original language	English (US)
Title of host publication	2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
State	Published - 2009
Externally published	Yes
Event	2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 - Shanghai, China Duration: Nov 2 2009 → Nov 6 2009

Publication series

Name	2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009

Other

Other	2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009
Country/Territory	China
City	Shanghai
Period	11/2/09 → 11/6/09

Bibliographical note

Funding Information:
The authors would like to thank the Research Foundation of São Paulo State—FAPESP—for financial support.

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

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title = "Effect of in and N incorporation on the GaInNAs VCSELs",

abstract = "We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials",

author = "Manaf, {Nor Azlian Abdul} and Alias, {Mohd Sharizal} and Mithani, {Sufian Mousa} and Yahya, {Mohamed Razman} and Mat, {Abdul Fatah Awang}",

note = "Funding Information: The authors would like to thank the Research Foundation of S{\~a}o Paulo State—FAPESP—for financial support.; 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 ; Conference date: 02-11-2009 Through 06-11-2009",

year = "2009",

language = "English (US)",

isbn = "9781557528773",

series = "2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009",

booktitle = "2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009",

}

Manaf, NAA, Alias, MS, Mithani, SM, Yahya, MR & Mat, AFA 2009, Effect of in and N incorporation on the GaInNAs VCSELs. in 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009., 5377225, 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009, 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009, Shanghai, China, 11/2/09.

Effect of in and N incorporation on the GaInNAs VCSELs. / Manaf, Nor Azlian Abdul; Alias, Mohd Sharizal; Mithani, Sufian Mousa et al.
2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009. 2009. 5377225 (2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of in and N incorporation on the GaInNAs VCSELs

AU - Manaf, Nor Azlian Abdul

AU - Alias, Mohd Sharizal

AU - Mithani, Sufian Mousa

AU - Yahya, Mohamed Razman

AU - Mat, Abdul Fatah Awang

N1 - Funding Information: The authors would like to thank the Research Foundation of São Paulo State—FAPESP—for financial support.

PY - 2009

Y1 - 2009

N2 - We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials

AB - We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials

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M3 - Conference contribution

AN - SCOPUS:77949381492

SN - 9781557528773

T3 - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009

BT - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009

T2 - 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009

Y2 - 2 November 2009 through 6 November 2009

ER -

Effect of in and N incorporation on the GaInNAs VCSELs

Abstract

Publication series

Other

Bibliographical note

ASJC Scopus subject areas

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