Abstract
We study the effect of In and N content in GaInNAs material system for application of 1.3 μm vertical cavity surface emitting lasers (VCSEL). The emission wavelength are successfully observed at 1.303 μm wavelength. VCSEL sample with Ga0.58In0.42As QW give the highest output power (0.5694 mW) with threshold current 11mA. OCIS codes: (250.7260) Vertical cavity surface emitting lasers; (160.6000) Semiconductor materials
Original language | English (US) |
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Title of host publication | 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 |
State | Published - 2009 |
Externally published | Yes |
Event | 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 - Shanghai, China Duration: Nov 2 2009 → Nov 6 2009 |
Other
Other | 2009 Asia Communications and Photonics Conference and Exhibition, ACP 2009 |
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Country/Territory | China |
City | Shanghai |
Period | 11/2/09 → 11/6/09 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials