Abstract
GaN crystal growth requires higher purity of materials. Some contaminants in NH3 gas could be the causal factor of defects in GaN crystals. These atoms act as donor or acceptor. In order to clearly demonstrate the effect of gaseous impurities such as H2O on the properties of undoped-GaN layer, high purity NH3 (N70) was used as NH3source. The concentration of H2O in NH3 was varied at 32, 49, 75, 142, 266, 489, and 899 ppb, respectively. Under the same recipe, we deposited undoped-GaN epitaxial layer with purifier, and H2O-doped GaN series layers. As similar to the results of CO and CO2-doped GaN series, the increase tendency of carrier density changing with increasing H2O concentration. The FWHMs of XRC around (0002) remain stable, witnessing that the crystal quality of GaN layer remain good. LT (15K) PL of undoped-GaN and H2O-doped GaN were measured, the D0X emission peak intensity of all H2O-doped GaN are decreased drastically compared with undoped-GaN. H2O impurity was doped into GaN layer, which not only effects electrical properties and but also effects the radiative emission and furthermore effects PL intensity, its mechanism is discussed.
Original language | English (US) |
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Title of host publication | AOPC 2017 |
Subtitle of host publication | Optoelectronics and Micro/Nano-Optics |
Editors | Zhiping Zhou, Min Gu, Xiaocong Yuan, Min Qiu |
Publisher | SPIE |
ISBN (Electronic) | 9781510614017 |
DOIs | |
State | Published - 2017 |
Event | Applied Optics and Photonics China: Optoelectronics and Micro/Nano-Optics, AOPC 2017 - Beijing, China Duration: Jun 4 2017 → Jun 6 2017 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 10460 |
ISSN (Print) | 0277-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | Applied Optics and Photonics China: Optoelectronics and Micro/Nano-Optics, AOPC 2017 |
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Country/Territory | China |
City | Beijing |
Period | 06/4/17 → 06/6/17 |
Bibliographical note
Publisher Copyright:© 2017 SPIE.
Keywords
- Donors
- GaN
- Impurities
- MOVPE
- PL
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Applied Mathematics
- Electrical and Electronic Engineering
- Computer Science Applications