This letter demonstrates the effect of H2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (QBD). Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Sep 2000|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering