Effect of frequency dependent electron-electron interaction on resonant tunneling

D. J. Fisher, C. Zhang, S. M. Stewart, W. Xu, M. L.F. Lerch, A. D. Martin, L. Eaves

Research output: Contribution to journalArticlepeer-review

Abstract

In electron resonant tunneling through a double barrier structure, we show that dynamical electron-electron interactions in the resonant well can give rise to additional tunneling satellites due to collective electronic excitations. We present a first principle treatment for frequency-dependent electron-electron interactions in the resonant tunneling problem. The result confirms the previously proposed plasmon assisted resonant tunneling mechanism. We also find that the particle-hole excitation has very little effect on resonant tunneling. Our result can be applied to study the effects of various electronic excitations on the resonant tunneling of electrons. © 1995 Academic Press.
Original languageEnglish (US)
Pages (from-to)239-248
Number of pages10
JournalSuperlattices and Microstructures
Volume18
Issue number3
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2022-09-15

ASJC Scopus subject areas

  • General Materials Science
  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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