Abstract
The crystallization behavior of PZT thin films deposited by the solgel process on RUO2/SiO2/Si and Pt/Ti/SiO2/Si was studied and compared. X-ray diffraction studies reveal that in both cases crystallization of the perovskite structure is preceded by pyrochlore formation. Transformation of the as-deposited amorphous film to the pyrochlore phase occurs at about 500°C on both Pt and RuO2 electrodes. In the case of films deposited on RuO2 electrodes, the pyrochlore phase persists to higher temperatures, up to 700°C, as TEM shows. In the case of films deposited on Pt, the pyrochlore phase is completely transformed to perovskite upon annealing at 700°C for 10 minutes. The morphology and microstructure of the films are strongly electrode dependent. Films grown on Pt are characterized by a high density of perovskite nuclei. The subsequent growth of these nuclei results in dense, phase-pure perovskite films. In contrast, films grown on RUO2 are characterized by a lower density of nuclei resulting in inhomogeneous films. Methods to improve the homogeneity of films grown on RuO2 by controlling the nucleation process are discussed.
Original language | English (US) |
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Pages (from-to) | 85-90 |
Number of pages | 6 |
Journal | Ferroelectrics |
Volume | 152 |
Issue number | 1 |
DOIs | |
State | Published - Feb 1994 |
Externally published | Yes |
Bibliographical note
Funding Information:Support for this work was provided by ARPA (Advanced Research Projects Agency).
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics