Effect of composition and annealing conditions on the electrical properties of Pb(ZrxTi1-x)O3 thin films deposited by the sol-gel process

H. N. Al-Shareef; K. R. Bellur; O. Auciello; X. Chen; A. I. Kingon

doi:10.1016/0040-6090(94)90822-2

Effect of composition and annealing conditions on the electrical properties of Pb(Zr_xTi_1-x)O₃ thin films deposited by the sol-gel process

H. N. Al-Shareef^*, K. R. Bellur, O. Auciello, X. Chen, A. I. Kingon

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(Zr_xTi_1-x)O₃ Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO₂/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650°C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 10⁷-10⁸ cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.

Original language	English (US)
Pages (from-to)	38-43
Number of pages	6
Journal	Thin Solid Films
Volume	252
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(94)90822-2
State	Published - Nov 15 1994
Externally published	Yes

Keywords

Dielectric properties
Dielectrics

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/0040-6090(94)90822-2

Cite this

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title = "Effect of composition and annealing conditions on the electrical properties of Pb(ZrxTi1-x)O3 thin films deposited by the sol-gel process",

abstract = "The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(ZrxTi1-x)O3 Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO2/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650°C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 107-108 cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.",

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author = "Al-Shareef, {H. N.} and Bellur, {K. R.} and O. Auciello and X. Chen and Kingon, {A. I.}",

year = "1994",

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doi = "10.1016/0040-6090(94)90822-2",

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AU - Al-Shareef, H. N.

AU - Bellur, K. R.

AU - Auciello, O.

AU - Chen, X.

AU - Kingon, A. I.

PY - 1994/11/15

Y1 - 1994/11/15

N2 - The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(ZrxTi1-x)O3 Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO2/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650°C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 107-108 cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.

AB - The effects of annealing temperature, Zr/Ti ratio and film lead content on the dielectric and ferroelectric properties of Pb(ZrxTi1-x)O3 Pt-based thin film capacitors (Pt/PZT/Pt/Ti/SiO2/Si) were investigated. The PZT films were grown using a spin-on sol-gel process. It was found that a minimum annealing temperature of 650°C is required to obtain good ferroelectric properties. The polarization fatigue rate was found to increase with increasing annealing temperature and decreasing Zr content. However, as the number of switching cycles increased passed 107-108 cycles, the polarization values for the various Zr/Ti ratios and the various annealing temperatures became essentially equal. Changing the lead content of the PZT thin films had a smaller effect on their fatigue and ferroelectric properties than did the Zr/Ti ratio and annealing temperature. The small signal dielectric constant showed a peak near the morphotropic phase boundary with a maximum value of about 600. The remanent and saturation polarization were largest near the morphotropic phase boundary and for the Ti-rich composition.

KW - Dielectric properties

KW - Dielectrics

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