Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies

Xingquan Zou; Mi He; Daniel Springer; Dongwook Lee; Saritha K. Naiz; Siew Ann Cheong; Tom Wu; C. Panagopoulos; D. Talbayev; Elbert E.M. Chia

doi:10.1063/1.3679725

Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies

Xingquan Zou, Mi He, Daniel Springer, Dongwook Lee, Saritha K. Naiz, Siew Ann Cheong, Tom Wu, C. Panagopoulos, D. Talbayev, Elbert E.M. Chia^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity ?1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature.We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.

Original language	English (US)
Article number	038
Journal	AIP Advances
Volume	2
Issue number	1
DOIs	https://doi.org/10.1063/1.3679725
State	Published - Mar 2012
Externally published	Yes

Bibliographical note

Funding Information:
The authors acknowledge support from Singapore Ministry of Education Academic Research Fund Tier 2 (Grant No. ARC 23/08), as well as the National Research Foundation Competitive Research Programme (Grant No. NRF-CRP4-2008-04). We thank Venky Venkatesan and Sankar Dhar for useful discussions.

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3679725

Cite this

@article{42661f01620945908cb4285618a2434d,

title = "Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies",

abstract = "We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity ?1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature.We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.",

author = "Xingquan Zou and Mi He and Daniel Springer and Dongwook Lee and Naiz, {Saritha K.} and {Ann Cheong}, Siew and Tom Wu and C. Panagopoulos and D. Talbayev and Chia, {Elbert E.M.}",

note = "Funding Information: The authors acknowledge support from Singapore Ministry of Education Academic Research Fund Tier 2 (Grant No. ARC 23/08), as well as the National Research Foundation Competitive Research Programme (Grant No. NRF-CRP4-2008-04). We thank Venky Venkatesan and Sankar Dhar for useful discussions.",

year = "2012",

month = mar,

doi = "10.1063/1.3679725",

language = "English (US)",

volume = "2",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "AIP Publishing",

number = "1",

}

TY - JOUR

T1 - Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies

AU - Zou, Xingquan

AU - He, Mi

AU - Springer, Daniel

AU - Lee, Dongwook

AU - Naiz, Saritha K.

AU - Ann Cheong, Siew

AU - Wu, Tom

AU - Panagopoulos, C.

AU - Talbayev, D.

AU - Chia, Elbert E.M.

N1 - Funding Information: The authors acknowledge support from Singapore Ministry of Education Academic Research Fund Tier 2 (Grant No. ARC 23/08), as well as the National Research Foundation Competitive Research Programme (Grant No. NRF-CRP4-2008-04). We thank Venky Venkatesan and Sankar Dhar for useful discussions.

PY - 2012/3

Y1 - 2012/3

N2 - We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity ?1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature.We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.

AB - We present THz conductivity of LaAlO3 (LAO) as a function of temperature and annealing, using terahertz time-domain spectroscopy (THz-TDS). We observed that, after annealing, spectral weight redistribution occurs, such that the real conductivity ?1(ω) changed from a featureless and almost frequency-independent spectrum, into one where peaks occur near the phonon frequencies. These phonon frequencies increase with increasing temperature.We attribute the appearance of these absorption peaks to the diffusion and relocation of oxygen vacancies. The dielectric functions of annealed LAO are well fitted with the Drude-Lorentz model.

UR - http://www.scopus.com/inward/record.url?scp=84874066198&partnerID=8YFLogxK

U2 - 10.1063/1.3679725

DO - 10.1063/1.3679725

M3 - Article

AN - SCOPUS:84874066198

SN - 2158-3226

VL - 2

JO - AIP Advances

JF - AIP Advances

IS - 1

M1 - 038

ER -

Effect of annealing on the temperature-dependent dielectric properties of LaAlO3 at terahertz frequencies

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this