Abstract
We achieved considerable laser diode (LD) improvement after annealing InGaP/InAlGaP laser structure at 950°C for a total annealing time of 2 min. The photoluminescence intensity is increased by 10 folds and full-wave at half-maximum is reduced from ∼30 to 20 nm. The measured LDs exhibited significantly reduced threshold current (Ith), from 2 to 1.5 A for a 1-mm long LD, improved internal efficiency (ηi), from 63% to 68%, and increased internal losses αi, from 14.3 to 18.6 cm−1. Our work suggests that the use of strain-induced quantum well intermixing is a viable solution for high-efficiency AlGaInP devices at shorter wavelengths. The advent of laser-based solid-state lighting (SSL) and visible-light communications (VLC) highlighted the importance of the current findings, which are aimed at improving color quality and photodetector received power in SSL and VLC, respectively, via annealed red LDs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 036004 |
| Journal | Journal of Nanophotonics |
| Volume | 10 |
| Issue number | 3 |
| DOIs | |
| State | Published - Jul 28 2016 |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): BAS/1/1614-01-01, CRG-1-2012-OOI-010
Acknowledgements: This work was supported by King Abdullah University of Science and Technology (KAUST) under Baseline Funding (BAS/1/1614-01-01) and Competitive Research Grant (CRG-1-2012-OOI-010).